AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$...

IEEE Electron Device Letters 2017 / 2 Vol. 38; Iss. 2

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhang, Zhili, Li, Weiyi, Fu, Kai, Yu, Guohao, Zhang, Xiaodong, Zhao, Yanfei, Sun, Shichuang, Song, Liang, Deng, Xuguang, Xing, Zheng, Yang, Lei, Ji, Rongkun, Zeng, Chunhong, Fan, Yaming, Dong, Zhihua,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2636136
Date:
February, 2017
File:
PDF, 854 KB
english, 2017
Conversion to is in progress
Conversion to is failed