Performance optimization of lateral AlGaN/GaN HEMTs with...

Solid-State Electronics 2017 / 04 Vol. 130

Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate

Sun, Hui, Liu, Meihua, Liu, Peng, Lin, Xinnan, Cui, Xiaole, Chen, Jianguo, Chen, Dongmin
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Volume:
130
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.01.006
Date:
April, 2017
File:
PDF, 1.82 MB
english, 2017
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