Volume 130

Solid-State Electronics

Volume 130

1

Paper-based, sound driven piezoelectric ZnO nanowire devices

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 689 KB

english, 2017

2

Pt nanoparticles functionalized 3D SnO2 nanoflowers for gas sensor application

Liu, Yinglin, Huang, Jing, Yang, Jiedi, Wang, Shurong

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.40 MB

english, 2017

3

Sub-15nm gate-all-around field effect transistors on vertical silicon nanowires

Larrieu, G., Guerfi, Y., Han, X.L., Clément, N.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 3.29 MB

english, 2017

4

Analytical model for thin-film SOI PIN-diode leakage current

Schmidt, Andrei, Dreiner, Stefan, Vogt, Holger, Goehlich, Andreas, Paschen, Uwe

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 966 KB

english, 2017

5

Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI

Song, Lei, Hu, Zhiyuan, Liu, Zhangli, Xin, Haiwei, Zhang, Zhengxuan, Zou, Shichang

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.21 MB

english, 2017

6

Performance improvement of IF(CN2)2 meta based N-channel OTFTs and their integration into a stable CMOS inverter

Bebiche, S., Bouhadda, I., Mohammed-Brahim, T., Coulon, N., Bergamini, J.F., Poriel, C., Jacques, E.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.12 MB

english, 2017

7

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

Raksharam,, Dutta, Aloke K.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.50 MB

english, 2017

8

Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy

Avakyants, Lev P., Aslanyan, Artem E., Bokov, Pavel Yu., Chervyakov, Anatoly V., Polozhentsev, Kirill Yu.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 884 KB

english, 2017

9

Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In, Seo, Yujin, Moon, Jungmin, Ahn, Hyun Jun, Yu, Hyun-Young, Hwang, Wan Sik, Cho, Byung Jin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 946 KB

english, 2017

10

Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate

Sun, Hui, Liu, Meihua, Liu, Peng, Lin, Xinnan, Cui, Xiaole, Chen, Jianguo, Chen, Dongmin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.82 MB

english, 2017

11

Analysis of the impedance field of saturated MOSFETs and drain thermal noise

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 585 KB

english, 2017

12

Charge-based MOSFET model based on the Hermite interpolation polynomial

Colalongo, Luigi, Richelli, Anna, Kovacs, Zsolt

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.00 MB

english, 2017

13

Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

Kuo, Wei-Cheng, Lee, Ming Jay, Wu, Mount-Learn, Lee, Chien-Chieh, Tsao, I-Yu, Chang, Jenq-Yang

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 873 KB

english, 2017

14

Editorial Board

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 55 KB

english, 2017