Boosting the SOI MOSFET Electrical Performance by Using the...

IEEE Transactions on Device and Materials Reliability 2017 / 3 Vol. 17; Iss. 1

Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment

Galembeck, Egon Henrique Salerno, Renaux, Christian, Flandre, Denis, Finco, Saulo, Gimenez, Salvador Pinillos
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Volume:
17
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2017.2652729
Date:
March, 2017
File:
PDF, 815 KB
english, 2017
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