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Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor
Kozlov, A. V., Korolev, M. A., Petrunina, S. S.Volume:
45
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739716070076
Date:
December, 2016
File:
PDF, 369 KB
english, 2016