Volume 45; Issue 7

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Russian Microelectronics
Volume 45; Issue 7

Russian Microelectronics

Volume 45; Issue 7

1

Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics

Sergeev, V. A., Frolov, I. V., Shirokov, A. A.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 405 KB

english, 2016

2

Features of the effect of the supply current on the operation mode of an oscillator based on an IMPATT diode taking into account the reflected signal

Dem’yanenko, A. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 902 KB

english, 2016

3

320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes

Belin, A. M., Zolotarev, V. I., Nikiforov, A. Yu., Popov, A. D.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 590 KB

english, 2016

4

Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor

Kozlov, A. V., Korolev, M. A., Petrunina, S. S.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 369 KB

english, 2016

5

Implementation of fast high-order digital filters based on new-generation FPGAs

Krylikov, N. O., Morozov, L. A., Plavich, M. L.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 693 KB

english, 2016

6

Development of magnetic semiconductor microsystems technology

Amelichev, V. V., Abanin, I. E., Aravin, V. V., Kostyuk, D. V., Kasatkin, S. I., Reznev, A. A., Saurov, A. N.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 456 KB

english, 2016

7

Formation of nanosized elements of microwave transistor gates by ion beam lithography

Lavrentyev, K. K., Nevolin, V. K., Rozanov, R. Yu., Tsarik, K. A., Zaitsev, A. A.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 1.20 MB

english, 2016

8

Refined model of low-impedance film resistors with a comb-like structure

Sadkov, V. D., Lopatkin, A. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 979 KB

english, 2016

9

TCAD leakage current analysis of a 45 nm MOSFET structure with a high-kdielectric

Petrosyants, K. O., Popov, D. A., Sambursky, L. M., Kharitonov, I. A.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 330 KB

english, 2016

10

Computer-aided design flow of devices for generating and processing signals for satellite navigation systems

Chebykin, A. G., Merkutov, A. S.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 639 KB

english, 2016

11

Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz

Mal’tsev, P. P., Maitama, M. V., Pavlov, A. Yu., Shchavruk, N. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 715 KB

english, 2016

12

Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography

Egorkin, V. I., Zaitsev, A. A., Shmelev, S. S.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 512 KB

english, 2016

13

Design of a multielement infrared thermal detector

Pevtsov, E. Ph., Sigov, A. S., Shnyakin, A. A.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 586 KB

english, 2016

14

A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode

F. I. Grigoriev,A. B. Aleksandrova,V. A. Gafurov

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 492 KB

english, 2016

15

Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems

A. V. Kozlov,A. Yu. Krasjukov,T. Yu. Krupkina…

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 897 KB

english, 2016

16

Intelligent system and electron components for controlling individual heat consumption

Yu. I. Shtern,Ya. S. Kozhevnikov,D. B. Rygalin,M. Yu. Shtern…

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 717 KB

english, 2016

17

Efficiency of frequency transformation on MOS transistors with a built-in channel under intensively handicapped radioreception

D. V. Zhuravlev,A. I. Mushta

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 784 KB

english, 2016

18

Development and research of MIS varicaps with charge transfer

Yu. V. Surin,A. B. Spiridonov,S. V. Litsoev

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 341 KB

english, 2016