Performance Improvement and Current Collapse Suppression of...

IEEE Electron Device Letters 2017 / 5 Vol. 38; Iss. 5

Performance Improvement and Current Collapse Suppression of Al 2 O 3 /AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

Shen, Lingyan, Zhang, Dongliang, Cheng, Xinhong, Zheng, Li, Xu, Dawei, Wang, Qian, Li, Jingjie, Cao, Duo, Yu, Yuehui
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2682261
Date:
May, 2017
File:
PDF, 523 KB
english, 2017
Conversion to is in progress
Conversion to is failed