Volume 38; Issue 5

IEEE Electron Device Letters

Volume 38; Issue 5

1

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio

Zhao, Yang, Wu, Chunlei, Huang, Qianqian, Chen, Cheng, Zhu, Jiadi, Guo, Lingyi, Jia, Rundong, Lv, Zhu, Yang, Yuchao, Li, Ming, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.25 MB

english, 2017

2

High-Density Reconfigurable Devices With Programmable Bottom-Gate Array

Park, Jun-Mo, Bae, Jong-Ho, Eum, Jai-Ho, Jin, Sung Hun, Park, Byung-Gook, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 399 KB

english, 2017

3

Solution Processed Top-Gate High-Performance Organic Transistor Nonvolatile Memory With Separated Molecular Microdomains Floating-Gate

Wu, Chao, Wang, Wei, Song, Junfeng

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 221 KB

english, 2017

4

Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

Couso, C., Porti, M., Martin-Martinez, J., Garcia-Loureiro, A. J., Seoane, N., Nafria, M.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 805 KB

english, 2017

5

High Voltage Diodes in Diamond Using (100)- and (111)- Substrates

Dutta, Maitreya, Koeck, Franz A. M., Li, Wenwen, Nemanich, Robert J., Chowdhury, Srabanti

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 435 KB

english, 2017

6

Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer

Jung, Sunwoo, Baik, Kwang Hyeon, Ren, Fan, Pearton, Stephen J., Jang, Soohwan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 334 KB

english, 2017

7

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

Choi, Sungju, Jang, Juntae, Kang, Hara, Baeck, Ju Heyuck, Bae, Jong Uk, Park, Kwon-Shik, Yoon, Soo Young, Kang, In Byeong, Kim, Dong Myong, Choi, Sung-Jin, Kim, Yong-Sung, Oh, Saeroonter, Kim, Dae Hwa

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 557 KB

english, 2017

8

Performance Limit Projection of Germanane Field-Effect Transistors

AlMutairi, AbdulAziz, Zhao, Yiju, Yin, Demin, Yoon, Youngki

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 592 KB

english, 2017

9

Performance Improvement and Current Collapse Suppression of Al 2 O 3 /AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

Shen, Lingyan, Zhang, Dongliang, Cheng, Xinhong, Zheng, Li, Xu, Dawei, Wang, Qian, Li, Jingjie, Cao, Duo, Yu, Yuehui

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 523 KB

english, 2017

10

Development of Silicon Nanowire-Based NEMS Absolute Pressure Sensor Through Surface Micromachining

Zhang, Songsong, Lou, Liang, Gu, Yuandong Alex

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 868 KB

english, 2017

11

In-Die Through-BEOL Metal Wall for Noise Isolation in 180-nm FD-SOI CMOS

Lu, Fei, Chen, Qi, Wang, Chenkun, Zhang, Feilong, Li, Cheng, Ma, Rui, Shawn Wang, X., Wang, Albert

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 787 KB

english, 2017

12

Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

Wang, Yuangang, Lv, Yuanjie, Song, Xubo, Chi, Lei, Yin, Jiayun, Zhou, Xingye, Fang, Yulong, Tan, Xin, Guo, Hongyu, Peng, Hao, Gu, Guodong, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.17 MB

english, 2017

13

High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al 2 O 3 Passivation Layer

Syamsul, Mohd, Kitabayashi, Yuya, Kudo, Takuya, Matsumura, Daisuke, Kawarada, Hiroshi

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.19 MB

english, 2017

14

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

Koo, Yunmo, Lee, Sangmin, Park, Seonggeon, Yang, Minkyu, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 811 KB

english, 2017

15

A Nano-Electro-Mechanical Switch Based Power Gating for Effective Stand-by Power Reduction in FinFET Technologies

Saha, Sumit, Kumar, U. Sajesh, Baghini, Maryam Shojaei, Goel, Mayank, Rao, V. Ramgopal

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 900 KB

english, 2017

16

ESD Robust Fully Salicided 5-V Integrated Power MOSFET in Submicron CMOS

Lee, Jian-Hsing, Iyer, Natarajan Mahadeva, Prabhu, Manjunatha

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 983 KB

english, 2017

17

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress

Yang, Jianwen, Liao, Po-Yung, Chang, Ting-Chang, Chen, Bo-Wei, Huang, Hui-Chun, Chiang, Hsiao-Cheng, Su, Wan-Ching, Zhang, Qun

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 423 KB

english, 2017

18

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Zhang, Kai, Kong, Yuechan, Zhu, Guangrun, Zhou, Jianjun, Yu, Xinxin, Kong, Cen, Li, Zhonghui, Chen, Tangsheng

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 466 KB

english, 2017

19

High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering

Haratipour, Nazila, Namgung, Seon, Grassi, Roberto, Low, Tony, Oh, Sang-Hyun, Koester, Steven J.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 885 KB

english, 2017

20

Effects of Gd 2 O 3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

Gao, Z., Romero, M. F., Redondo-Cubero, A., Pampillon, M. A., San Andres, E., Calle, F.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 5.16 MB

english, 2017

21

Enhanced Performance of Thiophene-Rich Heteroacene, Dibenzothiopheno [6,5-b:6’,5’-f] Thieno[3,2-b]Thiophene Thin-Film Transistor With MoO x Hole Injection Layers

Yun, Youngjun, Choi, Ajeong, Hahm, Suk Gyu, Chung, Jong Won, Lee, Yong Uk, Jung, Ji Young, Kim, Joo-Young, Park, Jeong-Il, Lee, Sangyoon, Jang, Jaewon

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 619 KB

english, 2017

22

Improved Stability of $\alpha $ -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment

Huang, X. D., Song, J. Q., Lai, P. T.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 288 KB

english, 2017

23

Coil-Shaped Electrodes to Reduce the Current Variation of Drop-Casted OTFTs

Kabir, H. M. Dipu, Ahmed, Zubair, Zhang, Lining, Chan, Mansun

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 835 KB

english, 2017

24

Current-Voltage Model for Negative Capacitance Field-Effect Transistors

Lee, Hyunjae, Yoon, Youngki, Shin, Changhwan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 795 KB

english, 2017

25

Sulfur Dioxide and Nitrogen Dioxide Gas Sensor Based on Arsenene: A First-Principle Study

Chen, Xian-Ping, Wang, Li-Ming, Sun, Xiang, Meng, Rui-Sheng, Xiao, Jing, Ye, Huai-Yu, Zhang, Guo-Qi

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 3.58 MB

english, 2017

26

Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks

Wang, Jiabin, Li, Yuxing, Yang, Yi, Ren, Tian-Ling

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 535 KB

english, 2017

27

Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter

Lu, Wenjie, Zhao, Xin, Choi, Dongsung, El Kazzi, Salim, del Alamo, Jesus A.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 579 KB

english, 2017

28

An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator With a Defected-Ground Structure

Zhong, Yi, Yang, Yang, Zhu, Xi, Dutkiewicz, Eryk, Shum, Kam Man, Xue, Quan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 917 KB

english, 2017

29

Fin-Array Tunneling Trigger With Tunable Hysteresis on (001) Silicon Substrate

Han, Yu, Li, Qiang, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 702 KB

english, 2017

30

Thin-Film Transistors With Amorphous Indium–Gallium-Oxide Bilayer Channel

Yang, C. P., Chang, S. J., Chang, T. H., Wei, C. Y., Juan, Y. M., Chiu, C. J., Weng, W. Y.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 456 KB

english, 2017

31

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ng, Geok Ing, Palacios, Tomas

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 858 KB

english, 2017

32

Investigation of Mo/Ti/AlN/HfO 2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Hu, Chenming, Lin, Yueh Chin, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 4.71 MB

english, 2017

33

Effective Richardson Constant of Sol-Gel Derived TiO 2 Films in n-TiO 2 /p-Si Heterojunctions

Rawat, Gopal, Kumar, Hemant, Kumar, Yogesh, Kumar, Chandan, Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 975 KB

english, 2017

34

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Lee, Heesung, Kim, Junyeap, Kim, Jaewon, Kim, Seong Kwang, Lee, Yongwoo, Kim, Jae-Young, Jang, Jun Tae, Park, Jaewon, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 735 KB

english, 2017

35

Corrections to “Interconnect Design and Benchmarking for Charge-Based Beyond-CMOS Device Proposals”

Pan, Chenyun, Naeemi, Azad

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 106 KB

english, 2017

36

PBTI Investigation of MoS 2 n-MOSFET With Al 2 O 3 Gate Dielectric

Yuan, Hui-Wen, Shen, Hui, Li, Jun-Jie, Shao, Jinhai, Huang, Daming, Chen, Yi-Fang, Wang, P. F., Ding, S. J., Chin, Albert, Li, Ming-Fu

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 857 KB

english, 2017

37

A Novel Characterization Method for Accurate Lumped Parameter Modeling of Electret Electrostatic Vibration Energy Harvesters

Karami, Armine, Galayko, Dimitri, Basset, Philippe

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 788 KB

english, 2017

38

High Performance Ge pMOSFETs With HfO 2 /Hf-Cap/GeO x Gate Stack and Suitable Post Metal Annealing Treatments

Yi, Shih-Han, Chang-Liao, Kuei-Shu, Wu, Tzung-Yu, Hsu, Chia-Wei, Huang, Jiayi

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.03 MB

english, 2017

39

Corrections to “A 3-D Assembled Silicon-Embedded Transformer for 10-MHz, Ultra-High-Isolation, Compact Chip-to-Chip Power Transfer” [Mar 17 356-358]

Wu, Rongxiang, Liao, Niteng, Fang, Xiangming, Cai, Jian, Wang, Qian, Sin, Johnny K. O.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 111 KB

english, 2017

40

IEEE Electron Device Letters

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 109 KB

english, 2017

41

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 90 KB

english, 2017

42

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 257 KB

english, 2017

43

Electron Devices Society

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 474 KB

2017

44

Changes to the Editorial Board

LIU, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 288 KB

english, 2017

45

Special Issue of IEEE Transactions on Electron Devices on Vacuum Electronics

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 1.05 MB

2017

46

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 200 KB

english, 2017

47

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 2.42 MB

2017

48

[Blank page]

Journal:

IEEE Electron Device Letters

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2017

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2017

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