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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and density of states reduction
Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, TVolume:
32
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa5fcb
Date:
April, 2017
File:
PDF, 1.05 MB
english, 2017