Volume 32; Issue 4

Semiconductor Science and Technology

Volume 32; Issue 4

1

The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems

Mikolajick, T, Heinzig, A, Trommer, J, Baldauf, T, Weber, W M

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.01 MB

english, 2017

2

Review on light management by nanostructures in chalcopyrite solar cells

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.68 MB

english, 2017

3

Noise spectroscopy of nanowire structures: fundamental limits and application aspects

Vitusevich, Svetlana, Zadorozhnyi, Ihor

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 906 KB

english, 2017

4

Numerical study of high-power semiconductor lasers for operation at sub-zero temperatures

Hasler, K H, Frevert, C, Crump, P, Erbert, G, Wenzel, H

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 735 KB

english, 2017

5

Linear and non-linear optical properties of Ag-doped Ge 2 Sb 2 Te 5 thin films estimated by single transmission spectra

Singh, Palwinder, Sharma, Pankaj, Sharma, Vineet, Thakur, Anup

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 938 KB

english, 2017

6

Piezoelectricity of 2D nanomaterials: characterization, properties, and applications

Zhang, Jin, Meguid, S A

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 949 KB

english, 2017

7

Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film

Mukherjee, Joynarayan, Mannam, Ramanjaneyulu, Rao, M S Ramachandra

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 917 KB

english, 2017

8

MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

Lemettinen, J, Kauppinen, C, Rudzinski, M, Haapalinna, A, Tuomi, T O, Suihkonen, S

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.73 MB

english, 2017

9

Impact of wet-oxidized Al 2 O 3 /AlGaN interface on AlGaN/GaN 2-DEGs

Meer, Mudassar, Majety, Sridhar, Takhar, Kuldeep, Ganguly, Swaroop, Saha, Dipankar

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.19 MB

english, 2017

10

Light-emitting silicon nanowires obtained by metal-assisted chemical etching

Irrera, Alessia, Lo Faro, Maria Josè, D’Andrea, Cristiano, Alessio Leonardi, Antonio, Artoni, Pietro, Fazio, Barbara, Anna Picca, Rosaria, Cioffi, Nicola, Trusso, Sebastiano, Franzò, Giorgia, Musumeci

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.00 MB

english, 2017

11

Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon

Wolter, Sascha J, Geisler, Dennis, Hensen, Jan, Köntges, Marc, Kajari-Schröder, Sarah, Bahnemann, Detlef W, Brendel, Rolf

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 639 KB

english, 2017

12

Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

Tran, H N, Mayes, E L H, Murdoch, B J, McCulloch, D G, McKenzie, D R, Bilek, M M M, Holland, A S, Partridge, J G

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 431 KB

english, 2017

13

GaN directional couplers for on-chip optical interconnect

Yuan, Jialei, Gao, Xumin, Yang, Yongchao, Zhu, Guixia, Yuan, Wei, Choi, Hoi Wai, Zhang, Zhiyu, Wang, Yongjin

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.97 MB

english, 2017

14

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

Komissarova, T A, Lebedev, M V, Sorokin, S V, Klimko, G V, Sedova, I V, Gronin, S V, Komissarov, K A, Calvet, W, Drozdov, M N, Ivanov, S V

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 473 KB

english, 2017

15

Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires

Mohammadbeigi, F, Kure, T, Callsen, G, Kumar, E Senthil, Wagner, M R, Hoffmann, A, Watkins, S P

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

16

Flexible thermoelectric nanogenerator based on the MoS 2 /graphene nanocomposite and its application for a self-powered temperature sensor

Xie, Yannan, Chou, Ting-Mao, Yang, Weifeng, He, Minghui, Zhao, Yingru, Li, Ning, Lin, Zong-Hong

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 730 KB

english, 2017

17

Spin dynamics and magneto-optical response in charge-neutral tunnel-coupled quantum dots

Gawełczyk, Michał, Machnikowski, Paweł

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.84 MB

english, 2017

18

Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions

Morikawa, Sei, Wilmart, Quentin, Masubuchi, Satoru, Watanabe, Kenji, Taniguchi, Takashi, Plaçais, Bernard, Machida, Tomoki

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 951 KB

english, 2017

19

Performance of Hg 1−x CdxTe infrared focal plane array at elevated temperature

Singh, Anand, Pal, Ravinder

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 742 KB

english, 2017

20

Synthesis of tunable tellurium nanoparticles

Guisbiers, G, Mimun, L C, Mendoza-Cruz, R, Nash, K L

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.16 MB

english, 2017

21

Enhanced performance in graphene RF transistors via advanced process integration

Hong, Seul Ki, Oh, Joong Gun, Hwang, Wan Sik, Cho, Byung Jin

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.12 MB

english, 2017

22

Comparison of Ti/Pd/Ag, Pd/Ti/Pd/Ag and Pd/Ge/Ti/Pd/Ag contacts to n-type GaAs for electronic devices handling high current densities

Huo, Pengyun, Galiana, Beatriz, Rey-Stolle, Ignacio

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.56 MB

english, 2017

23

Radiation effects in reconfigurable FPGAs

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.68 MB

english, 2017

24

Piezotronic PIN diode for microwave and piezophototronic devices

Luo, Lu, Zhang, Yan, Li, Lijie

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 915 KB

english, 2017

25

A study on the enhancement of opto-electronic properties of CdS thin films: seed-assisted fabrication

Kumarage, W G C, Wijesundera, R P, Seneviratne, V A, Jayalath, C P, Dassanayake, B S

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.15 MB

english, 2017

26

Piezotronics and piezo-phototronics based on a -axis nano/microwires: fundamentals and applications

Wang, Xingfu, Peng, Wenbo, Pan, Caofeng, Lin Wang, Zhong

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 4.97 MB

english, 2017

27

Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern

Lapeyrade, Mickael, Glaab, Johannes, Knauer, Arne, Kuhn, Christian, Enslin, Johannes, Reich, Christoph, Guttmann, Martin, Mehnke, Frank, Wernicke, Tim, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.87 MB

english, 2017

28

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 by atomic layer deposition: leakage current and density of states reduction

Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.05 MB

english, 2017

29

Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses

Oh, Hyungon, Cho, Kyoungah, Kim, Sangsig

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.78 MB

english, 2017

30

Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

Klehr, A, Wünsche, H J, Liero, A, Prziwarka, T, Erbert, G, Wenzel, H, Knigge, A

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.16 MB

english, 2017