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Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiN x passivation
Bai, Zhiyuan, Du, Jiangfeng, Liu, Yong, Xin, Qi, Liu, Yang, Yu, QiVolume:
133
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.03.013
Date:
July, 2017
File:
PDF, 1.11 MB
english, 2017