Study on the electrical degradation of AlGaN/GaN MIS-HEMTs...

Solid-State Electronics 2017 / 07 Vol. 133

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiN x passivation

Bai, Zhiyuan, Du, Jiangfeng, Liu, Yong, Xin, Qi, Liu, Yang, Yu, Qi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
133
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.03.013
Date:
July, 2017
File:
PDF, 1.11 MB
english, 2017
Conversion to is in progress
Conversion to is failed