Corrections to “AlGaN/GaN HEMTs With Damage-Free Neutral...

IEEE Electron Device Letters 2017 / 1 Vol. 38; Iss. 1

Corrections to “AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications” [Nov 16 1395-1398]

Lin, Yen-Ku, Noda, Shuichi, Lo, Hsiao-Chieh, Liu, Shih-Chien, Wu, Chia-Hsun, Wong, Yuen-Yee, Luc, Quang Ho, Chang, Po-Chun, Hsu, Heng-Tung, Samukawa, Seiji, Chang, Edward Yi
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2634606
Date:
January, 2017
File:
PDF, 115 KB
english, 2017
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