Volume 38; Issue 1

IEEE Electron Device Letters

Volume 38; Issue 1

1

Operation of SiGe HBTs Down to 70 mK

Ying, Hanbin, Wier, Brian R., Dark, Jason, Lourenco, Nelson E., Ge, Luwei, Omprakash, Anup P., Mourigal, Martin, Davidovic, Dragomir, Cressler, John D.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 486 KB

english, 2017

2

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Ma, Jun, Matioli, Elison

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.11 MB

english, 2017

3

“Driving”-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

Zhang, Meng, Zhou, Wei, Chen, Rongsheng, Wong, Man, Kwok, Hoi-Sing

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 4.70 MB

english, 2017

4

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

Zhou, Hong, Si, Mengwei, Alghamdi, Sami, Qiu, Gang, Yang, Lingming, Ye, Peide D.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 671 KB

english, 2017

5

$W$ -Band Traveling Wave Tube Amplifier Based on Planar Slow Wave Structure

Ulisse, G., Krozer, V.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 594 KB

english, 2017

6

First Principles Investigation of Small Molecules Adsorption on Antimonene

Meng, Rui-Shen, Cai, Miao, Jiang, Jun-Ke, Liang, Qiu-Hua, Sun, Xiang, Yang, Qun, Tan, Chun-Jian, Chen, Xian-Ping

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 7.59 MB

english, 2017

7

AlN/BP Heterostructure Photocatalyst for Water Splitting

Yang, Qun, Tan, Chun-Jian, Meng, Rui-Shen, Jiang, Jun-Ke, Liang, Qiu-Hua, Sun, Xiang, Yang, Dao-Guo, Chen, Xianping

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 704 KB

english, 2017

8

Saturation Behavior for a Comb-Like Light-Induced Synaptic Transistor

Zhu, Guixia, Gao, Xumin, Li, Yuanhang, Yuan, Jialei, Yuan, Wei, Yang, Yongchao, Zhang, Zhiyu, Wang, Yongjin

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 308 KB

english, 2017

9

Self-Powered UV-B Photodetector Based on Hybrid Al:MgZnO/PEDOT:PSS Schottky Diode

Zheng, Qinghong, Huang, Jin, Han, Chuxia, Chen, Yanqin

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 478 KB

english, 2017

10

Photosensitive Full-Swing Multi-Layer MoS 2 Inverters With Light Shielding Layers

Ryu, Jae Hyeon, Baek, Geun-Woo, Yu, Seung Jae, Seo, Seung Gi, Jin, Sung Hun

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 702 KB

english, 2017

11

Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs

Bang, Tewook, Lee, Byung-Hyun, Kim, Choong-Ki, Ahn, Dae-Chul, Jeon, Seung-Bae, Kang, Min-Ho, Oh, Jae-Sub, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 715 KB

english, 2017

12

Via Resistance Reduction in Advanced Copper Interconnects

Yang, C.-C., Spooner, T., Mclaughlin, P., Quon, R., Standaert, T., Edelstein, D.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 388 KB

english, 2017

13

Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

Liu, Yu-Heng, Jiang, Cheng-Min, Chen, Wei-Chun, Wang, Tahui, Tsai, Wen-Jer, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 752 KB

english, 2017

14

Performance of Topological Insulator Interconnects

Philip, Timothy M., Hirsbrunner, Mark R., Park, Moon Jip, Gilbert, Matthew J.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 407 KB

english, 2017

15

Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- $k$ -Metal-Gate CMOS Technologies

Khan, Faraz, Cartier, Eduard, Woo, Jason C. S., Iyer, Subramanian S.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 686 KB

english, 2017

16

A Tunable Dynamic Range Digital Single Photon Avalanche Diode

Habib, Mohammad Habib Ullah, Mcfarlane, Nicole

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 892 KB

english, 2017

17

A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

Park, Jaehoon, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 939 KB

english, 2017

18

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R on E/D-mode GaN HEMTs

Wong, Joel, Shinohara, Keisuke, Corrion, Andrea L., Brown, David F., Carlos, Zenon, Williams, Adam, Tang, Yan, Robinson, John F., Khalaf, Isaac, Fung, Helen, Schmitz, Adele, Oh, Thomas, Kim, Samuel, C

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 851 KB

english, 2017

19

Method to Determine the Root Cause of Low- $\kappa$ SiCOH Dielectric Failure Distributions

Ogden, Sean P., Yeap, Kong Boon, Shen, Tian, Justison, Patrick, Lu, Toh-Ming, Plawsky, Joel L.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 510 KB

english, 2017

20

Balanced MSM-2DEG Varactors Based on AlGaN/GaN Heterostructure With Cutoff Frequency of 1.54 THz

Hwang, Ji Hyun, Lee, Kye-Jeong, Hong, Sung-Min, Jang, Jae-Hyung

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 648 KB

english, 2017

21

Heating

Hou, Minmin, So, Hongyun, Suria, Ateeq J., Yalamarthy, Ananth Saran, Senesky, Debbie G.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 596 KB

english, 2017

22

Corrections to “AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications” [Nov 16 1395-1398]

Lin, Yen-Ku, Noda, Shuichi, Lo, Hsiao-Chieh, Liu, Shih-Chien, Wu, Chia-Hsun, Wong, Yuen-Yee, Luc, Quang Ho, Chang, Po-Chun, Hsu, Heng-Tung, Samukawa, Seiji, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 115 KB

english, 2017

23

IEEE Electron Device Letters

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 109 KB

english, 2017

24

Front cover

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 797 KB

2017

25

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 215 KB

english, 2017

26

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 2.08 MB

2017

27

Changes to the Editorial Board

Liu, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 125 KB

2017

28

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 67 KB

english, 2017

29

Table of contents [IEEE Transactions on Electron Devices]

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 197 KB

english, 2017

30

2017 1st Electron Devices Technology and Manufacturing Conference

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 1.46 MB

2017

31

Blank page

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 3 KB

2017

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