Pulse area dependent gradual resistance switching...

Solid-State Electronics 2017 / 06 Vol. 132

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory

Kim, Min-Hwi, Kim, Sungjun, Bang, Suhyun, Kim, Tae-Hyeon, Lee, Dong Keun, Cho, Seongjae, Lee, Jong-Ho, Park, Byung-Gook
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Volume:
132
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.03.015
Date:
June, 2017
File:
PDF, 886 KB
english, 2017
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