Volume 132

Solid-State Electronics

Volume 132

1

Modelling of resonant MEMS magnetic field sensor with electromagnetic induction sensing

Liu, Song, Xu, Huaying, Xu, Dehui, Xiong, Bin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.33 MB

english, 2017

2

Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

Ahmed, Nadim, Dutta, Aloke K.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 639 KB

english, 2017

3

Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

Wang, Xiao, Shen, Zhihua, Wu, Shengli, Zhang, Jintao

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 271 KB

english, 2017

4

Electrically heterogeneous high dielectric BaTi 0.4 (Fe 0.5 Nb 0.5 ) 0.6 O 3 ceramic

Patel, Piyush Kumar, Yadav, K.L.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.12 MB

english, 2017

5

Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks

Palumbo, F., Pazos, S., Aguirre, F., Winter, R., Krylov, I., Eizenberg, M.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

6

Cu(In, Ga)Se 2 thin film solar cells grown at low temperatures

Zhang, W., Zhu, H., Zhang, L., Guo, Y., Niu, X., Li, Z., Chen, J., Liu, Q., Mai, Y.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.48 MB

english, 2017

7

HfO 2 -based resistive switching memory with CNTs electrode for high density storage

Cheng, W.K., Wang, F., Han, Y.M., Zhang, Z.C., Zhao, J.S., Zhang, K.L.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.58 MB

english, 2017

8

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Acurio, E., Crupi, F., Magnone, P., Trojman, L., Meneghesso, G., Iucolano, F.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 933 KB

english, 2017

9

Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

Kim, Hyung Yoon, Seok, Ki Hwan, Chae, Hee Jae, Lee, Sol Kyu, Lee, Yong Hee, Joo, Seung Ki

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.12 MB

english, 2017

10

3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters

Alim, Mohammad A., Rezazadeh, Ali A.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 3.15 MB

english, 2017

11

Stacked resistive switches for AND/OR logic gates

Kim, Myung Ju, Son, Kyung Rock, Park, Ju Hyun, Kim, Tae Geun

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1021 KB

english, 2017

12

PLL application research of a broadband MEMS phase detector: Theory, measurement and modeling

Han, Juzheng, Liao, Xiaoping

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.08 MB

english, 2017

13

Dielectric characterization of Cu x S-Ni y S z /FNBR and CuS-Ni y S z /FNBR nanocomposites

Balayeva, Ofeliya O., Azizov, Abdulsaid A., Muradov, Mustafa B., Eyvazova, Goncha M.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 3.07 MB

english, 2017

14

The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

Tsai, Ying-Chieh, Gong, Jeng, Chan, Wing-Chor, Wu, Shyi-Yuan, Lien, Chenhsin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 3.69 MB

english, 2017

15

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, Otsuka, Shintaro, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.47 MB

english, 2017

16

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory

Kim, Min-Hwi, Kim, Sungjun, Bang, Suhyun, Kim, Tae-Hyeon, Lee, Dong Keun, Cho, Seongjae, Lee, Jong-Ho, Park, Byung-Gook

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 886 KB

english, 2017

17

Effect of p-GaN layer grown with H 2 carrier gas on wall-plug efficiency of high-power LEDs

Lu, Kuan Fu, Lin, Tien Kun, Liou, Jian Kai, Yang, Chyi Da, Lee, Chong Yi, Tsai, Jeng Da

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.11 MB

english, 2017

18

Investigation on scalability of dual trench epitaxial diode for phase change memory

Wang, Heng, Liu, Bo, Liu, Yan, Zhang, Chao, Zhan, YiPeng, Xu, Zhen, Gao, Dan, Song, ZhiTang, Feng, Songlin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.01 MB

english, 2017

19

Editorial Board

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 55 KB

english, 2017