CdHgTe heterostructures for new-generation IR...

Semiconductors 2016 / 12 Vol. 50; Iss. 12

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu., Tsarenko, A. V., Yakushev, M. V.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616120265
Date:
December, 2016
File:
PDF, 213 KB
english, 2016
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