Volume 50; Issue 12

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Semiconductors
Volume 50; Issue 12

Semiconductors

Volume 50; Issue 12

1

Polariton condensate coherence in planar microcavities in a magnetic field

Chernenko, A. V., Rahimi-lman, A., Fischer, J., Amthor, M., Schneider, C., Reitzenstein, S., Forchel, A., Hoefling, S.

Journal:

Year:

2016

Language:

english

File:

PDF, 245 KB

english, 2016

2

Polarization of the photoluminescence of quantum dots incorporated into quantum wires

Platonov, A. V., Kochereshko, V. P., Kats, V. N., Cirlin, G. E., Bouravleuv, A. D., Avdoshina, D. V., Delga, A., Besombes, L., Mariette, H.

Journal:

Year:

2016

Language:

english

File:

PDF, 308 KB

english, 2016

3

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

Puzanov, A. S., Obolenskiy, S. V., Kozlov, V. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 363 KB

english, 2016

4

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Surovegina, E. A., Demidov, E. V., Drozdov, M. N., Murel, A. V., Khrykin, O. I., Shashkin, V. I., Lobaev, M. A., Gorbachev, A. M., Viharev, A. L., Bogdanov, S. A., Isaev, V. A., Muchnikov, A. B., Cher

Journal:

Year:

2016

Language:

english

File:

PDF, 482 KB

english, 2016

5

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

Tarasova, E. A., Obolenskaya, E. S., Hananova, A. V., Obolensky, S. V., Zemliakov, V. E., Egorkin, V. I., Nezhenzev, A. V., Saharov, A. V., Zazul’nokov, A. F., Lundin, V. V., Zavarin, E. E., Medvedev,

Journal:

Year:

2016

Language:

english

File:

PDF, 573 KB

english, 2016

6

Resonant features of the terahertz generation in semiconductor nanowires

Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kuritsyn, D. I., Rumyantsev, V. V., Morosov, S. V., Kakko, J. P., Huhtio, T., Lipsanen, H.

Journal:

Year:

2016

Language:

english

File:

PDF, 697 KB

english, 2016

7

Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

Yunin, P. A., Drozdov, Yu. N., Chernov, V. V., Isaev, V. A., Bogdanov, S. A., Muchnikov, A. B.

Journal:

Year:

2016

Language:

english

File:

PDF, 380 KB

english, 2016

8

Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection

Fedorov, G. E., Stepanova, T. S., Gazaliev, A. Sh., Gaiduchenko, I. A., Kaurova, N. S., Voronov, B. M., Goltzman, G. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 318 KB

english, 2016

9

Mercury vacancies as divalent acceptors in HgyTe1 –y/CdxHg1 –xTe structures with quantum wells

Kozlov, D. V., Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Varavin, V. S., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Teppe, F.

Journal:

Year:

2016

Language:

english

File:

PDF, 232 KB

english, 2016

10

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Novikov, A. V., Shaleev, M. V., Yurasov, D. V., Yunin, P. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 694 KB

english, 2016

11

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Yu. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., Lipsanen, H.

Journal:

Year:

2016

Language:

english

File:

PDF, 494 KB

english, 2016

12

On a new method of heterojunction formation in III–V nanowires

Sibirev, N. V., Koryakin, A. A., Dubrovskii, V. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 156 KB

english, 2016

13

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

Rumyantsev, V. V., Fadeev, M. A., Morozov, S. V., Dubinov, A. A., Kudryavtsev, K. E., Kadykov, A. M., Tuzov, I. V., Dvoretskii, S. A., Mikhailov, N. N., Gavrilenko, V. I., Teppe, F.

Journal:

Year:

2016

Language:

english

File:

PDF, 409 KB

english, 2016

14

Strained multilayer structures with pseudomorphic GeSiSn layers

Timofeev, V. A., Nikiforov, A. I., Tuktamyshev, A. R., Yesin, M. Yu., Mashanov, V. I., Gutakovskii, A. K., Baidakova, N. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 505 KB

english, 2016

15

Polarization of the induced THz emission of donors in silicon

Kovalevsky, K. A., Zhukavin, R. Kh., Tsyplenkov, V. V., Pavlov, S. G., Hübers, H. -W., Abrosimov, N. V., Shastin, V. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 562 KB

english, 2016

16

Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm

Akimov, A. N., Klimov, A. E., Morozov, S. V., Suprun, S. P., Epov, V. S., Ikonnikov, A. V., Fadeev, M. A., Rumyantsev, V. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 529 KB

english, 2016

17

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu., Tsarenko, A. V., Yakushev, M. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 213 KB

english, 2016

18

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

V. Ya. Aleshkin,L. V. Gavrilenko,D. M. Gaponova,Z. F. Krasil’nik…

Journal:

Year:

2016

Language:

english

File:

PDF, 204 KB

english, 2016

19

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

N. A. Baidakova,A. V. Novikov,M. V. Shaleev,D. V. Yurasov…

Journal:

Year:

2016

Language:

english

File:

PDF, 333 KB

english, 2016

20

Quantum Hall effect and hopping conductivity inn-InGaAs/InAlAs nanoheterostructures

S. V. Gudina,Yu. G. Arapov,A. P. Saveliev,V. N. Neverov…

Journal:

Year:

2016

Language:

english

File:

PDF, 321 KB

english, 2016

21

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

D. V. Ishchenko,A. E. Klimov,V. N. Shumsky,V. S. Epov

Journal:

Year:

2016

Language:

english

File:

PDF, 360 KB

english, 2016

22

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

M. N. Koryazhkina,S. V. Tikhov,O. N. Gorshkov,A. P. Kasatkin…

Journal:

Year:

2016

Language:

english

File:

PDF, 457 KB

english, 2016

23

Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm

K. V. Maremyanin,V. V. Rumyantsev,A. V. Ikonnikov,L. S. Bovkun…

Journal:

Year:

2016

Language:

english

File:

PDF, 182 KB

english, 2016

24

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

E. S. Obolenskaya,E. A. Tarasova,A. Yu. Churin,S. V. Obolensky…

Journal:

Year:

2016

Language:

english

File:

PDF, 221 KB

english, 2016

25

Physical properties of metal–insulator–semiconductor structures based onn-GaAs with InAs quantum dots deposited onto the surface of ann-GaAs layer

S. V. Tikhov,O. N. Gorshkov,M. N. Koryazhkina,A. P. Kasatkin…

Journal:

Year:

2016

Language:

english

File:

PDF, 461 KB

english, 2016

26

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

V. I. Ushanov,V. V. Chaldyshev,V. V. Preobrazhenskii,M. A. Putyato…

Journal:

Year:

2016

Language:

english

File:

PDF, 387 KB

english, 2016

27

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

A. N. Yablonsky,R. Kh. Zhukavin,N. A. Bekin,A. V. Novikov…

Journal:

Year:

2016

Language:

english

File:

PDF, 466 KB

english, 2016

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