Reliability improvement in GaN HEMT power device using a...

Solid-State Electronics 2017 / 07 Vol. 133

Reliability improvement in GaN HEMT power device using a field plate approach

Wu, Wen-Hao, Lin, Yueh-Chin, Chin, Ping-Chieh, Hsu, Chia-Chieh, Lee, Jin-Hwa, Liu, Shih-Chien, Maa, Jer-shen, Iwai, Hiroshi, Chang, Edward Yi, Hsu, Heng-Tung
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Volume:
133
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.05.001
Date:
July, 2017
File:
PDF, 2.14 MB
english, 2017
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