Operation of 4H-SiC high voltage normally-OFF V-JFET in...

Microelectronics Reliability 2017 / 07 Vol. 74

Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment

Popelka, S., Hazdra, P., Záhlava, V.
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Volume:
74
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.05.015
Date:
July, 2017
File:
PDF, 2.16 MB
english, 2017
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