Semi-insulating 4H-SiC layers formed by the implantation of...

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions inton-type epitaxial films

P. A. Ivanov,M. F. Kudoyarov,M. A. Kozlovski,A. S. Potapov…
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616070071
Date:
July, 2016
File:
PDF, 196 KB
english, 2016
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