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Volume 50; Issue 7
Main
Semiconductors
Volume 50; Issue 7
Semiconductors
Volume 50; Issue 7
1
Nonlinear optical response of planar and spherical CdSe nanocrystals
Selyukov, A. S.
,
Isaev, A. A.
,
Vitukhnovsky, A. G.
,
Litvak, V. L.
,
Katsaba, A. V.
,
Korshunov, V. M.
,
Vasiliev, R. B.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 358 KB
Your tags:
english, 2016
2
Solubility of oxygen in CdS single crystals and their physicochemical properties
Morozova, N. K.
,
Kanakhin, A. A.
,
Shnitnikov, A. S.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 242 KB
Your tags:
english, 2016
3
Electrochemical lithiation of silicon with varied crystallographic orientation
Astrova, E. V.
,
Rumyantsev, A. M.
,
Li, G. V.
,
Nashchekin, A. V.
,
Kazantsev, D. Yu.
,
Ber, B. Ya.
,
Zhdanov, V. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 691 KB
Your tags:
english, 2016
4
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields
Kuznetsova, Ya. V.
,
Jmerik, V. N.
,
Nechaev, D. V.
,
Kuznetsov, A. M.
,
Zamoryanskaya, M. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 392 KB
Your tags:
english, 2016
5
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
Romanov, V. V.
,
Dement’ev, P. A.
,
Moiseev, K. D.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 376 KB
Your tags:
english, 2016
6
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
Seredin, P. V.
,
Fedyukin, A. V.
,
Arsentyev, I. N.
,
Vavilova, L. S.
,
Tarasov, I. S.
,
Prutskij, T.
,
Leiste, H.
,
Rinke, M.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 640 KB
Your tags:
english, 2016
7
Local emission spectroscopy of surface micrograins in AIIIBVsemiconductors
Zhukov, N. D.
,
Gluhovskoy, E. G.
,
Mosiyash, D. S.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 316 KB
Your tags:
english, 2016
8
Effect of thallium doping on the mobility of electrons in Bi2Se3and holes in Sb2Te3
Kudryashov, A. A.
,
Kytin, V. G.
,
Lunin, R. A.
,
Kulbachinskii, V. A.
,
Banerjee, A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 347 KB
Your tags:
english, 2016
9
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor
Romaka, V. A.
,
Rogl, P.
,
Romaka, V. V.
,
Kaczorowski, D.
,
Stadnyk, Yu. V.
,
Krayovskyy, V. Ya.
,
Horyn, A. M.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 382 KB
Your tags:
english, 2016
10
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Parkhomenko, Ya. A.
,
Dement’ev, P. A.
,
Moiseev, K. D.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 376 KB
Your tags:
english, 2016
11
Optical properties ofp–i–nstructures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Krivyakin, G. K.
,
Volodin, V. A.
,
Kochubei, S. A.
,
Kamaev, G. N.
,
Purkrt, A.
,
Remes, Z.
,
Fajgar, R.
,
Stuchliková, T. H.
,
Stuchlik, J.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 503 KB
Your tags:
english, 2016
12
Technique for forming ITO films with a controlled refractive index
Markov, L. K.
,
Smirnova, I. P.
,
Pavluchenko, A. S.
,
Kukushkin, M. V.
,
Zakheim, D. A.
,
Pavlov, S. I.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 469 KB
Your tags:
english, 2016
13
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Vasilyev, Yu. B.
,
Mikhailov, N. N.
,
Vasilyeva, G. Yu.
,
Ivánov, Yu. L.
,
Zakhar’in, A. O.
,
Andrianov, A. V.
,
Vorobiev, L. E.
,
Firsov, D. A.
,
Grigoriev, M. N.
,
Antonov, A. V.
,
Ikonnikov, A. V.
,
Gavrilenk
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 420 KB
Your tags:
english, 2016
14
On current spreading in solar cells: a two-parameter tube model
Mintairov, M. A.
,
Evstropov, V. V.
,
Mintairov, S. A.
,
Timoshina, N. Kh.
,
Shvarts, M. Z.
,
Kalyuzhnyy, N. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 573 KB
Your tags:
english, 2016
15
Study of deep levels in GaAsp–i–nstructures
Sobolev, M. M.
,
Soldatenkov, F. Yu.
,
Kozlov, V. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 282 KB
Your tags:
english, 2016
16
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors
Bogoslovskiy, N. A.
,
Petrov, P. V.
,
Ivánov, Yu. L.
,
Averkiev, N. S.
,
Tsendin, K. D.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 337 KB
Your tags:
english, 2016
17
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Fefelov, S. A.
,
Kazakova, L. P.
,
Arsova, D.
,
Kozyukhin, S. A.
,
Tsendin, K. D.
,
Prikhodko, O. Yu.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 264 KB
Your tags:
english, 2016
18
Chloride epitaxy of β-Ga2O3layers grown onc-sapphire substrates
Nikolaev, V. I.
,
Pechnikov, A. I.
,
Stepanov, S. I.
,
Sharofidinov, Sh. Sh.
,
Golovatenko, A. A.
,
Nikitina, I. P.
,
Smirnov, A. N.
,
Bugrov, V. E.
,
Romanov, A. E.
,
Brunkov, P. N.
,
Kirilenko, D. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 443 KB
Your tags:
english, 2016
19
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
Ivanov, P. A.
,
Potapov, A. S.
,
Samsonova, T. P.
,
Grekhov, I. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 289 KB
Your tags:
english, 2016
20
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum
Kotousova, I. S.
,
Lebedev, S. P.
,
Lebedev, A. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.05 MB
Your tags:
english, 2016
21
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
A. N. Imenkov,E. A. Grebenshchikova,V. A. Shutaev,A. M. Ospennikov…
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 352 KB
Your tags:
english, 2016
22
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions inton-type epitaxial films
P. A. Ivanov,M. F. Kudoyarov,M. A. Kozlovski,A. S. Potapov…
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 196 KB
Your tags:
english, 2016
23
Indium nanowires at the silicon surface
A. S. Kozhukhov,D. V. Sheglov,A. V. Latyshev
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 279 KB
Your tags:
english, 2016
24
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
A. S. Kyuregyan,A. V. Gorbatyuk,B. V. Ivanov
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 398 KB
Your tags:
english, 2016
25
Electron exchange between tin impurityU–centers in PbSzSe1–zalloys
A. V. Marchenko,E. I. Terukov,P. P. Seregin,A. N. Rasnjuk…
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 948 KB
Your tags:
english, 2016
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