Demonstration of 4H-SiC Digital Integrated Circuits Above...

IEEE Electron Device Letters 2017 / 8 Vol. 38; Iss. 8

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Neudeck, Philip G., Spry, David J., Chen, Liangyu, Prokop, Norman F., Krasowski, Michael J.
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2017.2719280
Date:
August, 2017
File:
PDF, 1.68 MB
english, 2017
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