IEEE Electron Device Letters

1

Numerical Study of p-n-Doped Poly-Silicon Shield Gate Trench MOSFET With Reduced Output Capacitance

Wang, Wendi, Ning, Runtao, Shen, Z. John

Journal:

Year:

2017

Language:

english

File:

PDF, 1.20 MB

english, 2017

2

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 213 KB

english, 2017

3

A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Lee, Geon-Beom, Kim, Choong-Ki, Park, Jun-Young, Bang, Tewook, Bae, Hagyoul, Kim, Seong-Yeon, Ryu, Seung-Wan, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 238 KB

english, 2017

4

pH Sensing and Low-Frequency Noise Characteristics of Low Temperature (400 °C) p-Channel SOI Schottky ISFETs

Liao, Wugang, Wei, Wei, Tong, Yu, Wong, Andrew, Chim, Wai Kin, Zhu, Chunxiang

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 867 KB

english, 2017

5

Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Lee, Seung-Wook, Bang, Tewook, Kim, Choong-Ki, Hwang, Kyu-Man, Jang, Byung Chul, Moon, Dong-Il, Bae, Hagyoul, Seo, Myungsoo, Kim, Seong-Yeon, Kim, Do-Hyun, Choi, Sung-Yool, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 877 KB

english, 2017

6

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Neudeck, Philip G., Spry, David J., Chen, Liangyu, Prokop, Norman F., Krasowski, Michael J.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.68 MB

english, 2017

7

48th IEEE Semiconductor Interface Specialists Conference

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 1.08 MB

2017

8

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 2.45 MB

2017

10

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 91 KB

english, 2017

11

Special issue of IEEE Electron Devices on vacuum electronics

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 1.10 MB

2017

12

[Blank page]

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 3 KB

2017

14

Changes to the Editorial Board

Liu, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2017

File:

PDF, 123 KB

2017

15

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 92 KB

english, 2017

Volume 38; Issue 8

IEEE Electron Device Letters

Numerical Study of p-n-Doped Poly-Silicon Shield Gate Trench MOSFET With Reduced Output Capacitance

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

pH Sensing and Low-Frequency Noise Characteristics of Low Temperature (400 °C) p-Channel SOI Schottky ISFETs

Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

48th IEEE Semiconductor Interface Specialists Conference

Table of contents

EDS Meetings Calendar

IEEE Electron Device Letters information for authors

Special issue of IEEE Electron Devices on vacuum electronics

Table of contents

[Blank page]

Changes to the Editorial Board

IEEE Electron Device Letters