Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region
Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H., Stuchlik, J.Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617100128
Date:
October, 2017
File:
PDF, 907 KB
english, 2017