Volume 51; Issue 10

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Semiconductors
Volume 51; Issue 10

Semiconductors

Volume 51; Issue 10

1

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Mikhailova, M. P., Berezovets, V. A., Parfeniev, R. V., Danilov, L. V., Safonchik, M. O., Hospodková, A., Pangrác, J., Hulicius, E.

Journal:

Year:

2017

Language:

english

File:

PDF, 350 KB

english, 2017

2

(FeIn2S4) x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap

Bodnar, I. V., Barugu, T. G., Kasyuk, Yu. V., Fedotova, Yu. A.

Journal:

Year:

2017

Language:

english

File:

PDF, 304 KB

english, 2017

3

Tight-binding simulation of silicon and germanium nanocrystals

Gert, A. V., Nestoklon, M. O., Prokofiev, A. A., Yassievich, I. N.

Journal:

Year:

2017

Language:

english

File:

PDF, 2.49 MB

english, 2017

4

Photoluminescence of perovskite CsPbX 3 (X = Cl, Br, I) nanocrystals and solid solutions on their basis

Matyushkin, L. B., Moshnikov, V. A.

Journal:

Year:

2017

Language:

english

File:

PDF, 456 KB

english, 2017

5

Mechanism of resistive switching in films based on partially fluorinated graphene

Ivanov, A. I., Nebogatikova, N. A., Kurkina, I. I., Antonova, I. V.

Journal:

Year:

2017

Language:

english

File:

PDF, 647 KB

english, 2017

6

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Zubov, F. I., Semenova, E. S., Kulkova, I. V., Yvind, K., Kryzhanovskaya, N. V., Maximov, M. V., Zhukov, A. E.

Journal:

Year:

2017

Language:

english

File:

PDF, 322 KB

english, 2017

7

Interdiffusion and phase formation in the Fe–TiO2 thin-film system

Afonin, N. N., Logacheva, V. A.

Journal:

Year:

2017

Language:

english

File:

PDF, 248 KB

english, 2017

8

Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

Oveshnikov, L. N., Nekhaeva, E. I.

Journal:

Year:

2017

Language:

english

File:

PDF, 532 KB

english, 2017

9

Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H., Stuchlik, J.

Journal:

Year:

2017

Language:

english

File:

PDF, 907 KB

english, 2017

10

Effects of local photoexcitation of high-concentration charge carriers in silicon

Journal:

Year:

2017

Language:

english

File:

PDF, 231 KB

english, 2017

11

Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation

Vikulin, I. M., Gorbachev, V. E., Kurmashev, Sh. D.

Journal:

Year:

2017

Language:

english

File:

PDF, 225 KB

english, 2017

12

Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region

Nemov, S. A., Ulashkevich, Yu. V., Allahkhah, A. A.

Journal:

Year:

2017

Language:

english

File:

PDF, 213 KB

english, 2017

13

X-ray photoelectron spectroscopy studies of ZnS x Se1–x nanostructures produced in a porous aluminum-oxide matrix

Chukavin, A. I., Valeev, R. G., Beltiukov, A. N.

Journal:

Year:

2017

Language:

english

File:

PDF, 471 KB

english, 2017

14

Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures

Alfimova, D. L., Lunin, L. S., Lunina, M. L., Arustamyan, D. A., Kazakova, A. E., Chebotarev, S. N.

Journal:

Year:

2017

Language:

english

File:

PDF, 3.45 MB

english, 2017

15

Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots

Bayramov, F. B., Poloskin, E. D., Chernev, A. L., Toropov, V. V., Dubina, M. V., Bairamov, B. Kh.

Journal:

Year:

2017

Language:

english

File:

PDF, 304 KB

english, 2017

16

Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell

Gutkin, A. A., Averkiev, N. S.

Journal:

Year:

2017

Language:

english

File:

PDF, 1024 KB

english, 2017

17

Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation

Bondarenko, V. B., Filimonov, A. V.

Journal:

Year:

2017

Language:

english

File:

PDF, 200 KB

english, 2017

18

Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Tyschenko, I. E., Cherkov, A. G.

Journal:

Year:

2017

Language:

english

File:

PDF, 1000 KB

english, 2017

19

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

Dikareva, N. V., Zvonkov, B. N., Vikhrova, O. V., Nekorkin, S. M., Aleshkin, V. Ya., Dubinov, A. A.

Journal:

Year:

2017

Language:

english

File:

PDF, 244 KB

english, 2017