Topological variation on sub-20 nm double-gate inversion...

Microelectronics Reliability 2018 / 03 Vol. 82

Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance

Nilamani, S., Chitra, P., Ramakrishnan, V.N.
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Volume:
82
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.01.002
Date:
March, 2018
File:
PDF, 1.55 MB
english, 2018
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