Volume 82

Microelectronics Reliability

Volume 82

1

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification

Schlünder, C., Puschkarsky, K., Rott, G.A., Gustin, W., Reisinger, H.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 2.01 MB

english, 2018

2

Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance

Nilamani, S., Chitra, P., Ramakrishnan, V.N.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.55 MB

english, 2018

3

Thermal lifetime estimation method of IGBT module considering solder fatigue damage feedback loop

Gao, Bing, Yang, Fan, Chen, Minyou, Chen, Yigao, Lai, Wei, Liu, Chao

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.32 MB

english, 2018

4

Study of the operation and SET robustness of a CMOS pulse stretching circuit

Andjelkovic, Marko, Krstic, Milos, Kraemer, Rolf

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 836 KB

english, 2018

5

Low-cycle fatigue testing and thermal fatigue life prediction of electroplated copper thin film for through hole via

Watanabe, Kazuki, Kariya, Yoshiharu, Yajima, Naoyuki, Obinata, Kizuku, Hiroshima, Yoshiyuki, Kikuchi, Shunichi, Matsui, Akiko, Shimizu, Hiroshi

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.78 MB

english, 2018

6

A review of pulsed NBTI in P-channel power VDMOSFETs

Danković, D., Manić, I., Prijić, A., Davidović, V., Prijić, Z., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stojadinović, N.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.20 MB

english, 2018

7

Experimental study on optical-thermal associated characteristics of LED car lamps under the action of ionic wind

Wang, Jing, Cai, Yi-xi, Li, Xiao-hua, Shi, Yun-fei, Bao, Ya-chao, Wang, Jun, Shi, Yun-xi

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.99 MB

english, 2018

8

Fault diagnosis for the motor drive system of urban transit based on improved Hidden Markov Model

Darong, Huang, Lanyan, Ke, Xiaoyan, Chu, Ling, Zhao, Bo, Mi

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

9

60 Co gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs

Lawal, Olarewaju Mubashiru, Liu, Shuhuan, Li, Zhuoqi, Hussain, Aqil

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 687 KB

english, 2018

10

Technology scaling implications for BTI reliability

Ramey, S.M., Prasad, C., Rahman, A.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.86 MB

english, 2018

11

Lifetime estimation of IGBT modules for MMC-HVDC application

Wang, Longjun, Xu, Jiayou, Wang, Gang, Zhang, Zheng

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.33 MB

english, 2018

12

Microstructural and tensile properties of Fe and Bi added Sn-1Ag-0.5Cu solder alloy under high temperature environment

Ali, Bakhtiar, Sabri, Mohd Faizul Mohd, Said, Suhana Mohd, Sukiman, Nazatul Liana, Jauhari, Iswadi, Mahdavifard, Mohammad Hossein

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.11 MB

english, 2018

13

The effect of ionization and displacement damage on minority carrier lifetime

Yang, Jianqun, Li, Xingji, Liu, Chaoming, Fleetwood, Daniel M.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

14

Synergistic effects of NPN transistors caused by combined proton irradiations with different energies

Li, Xingji, Yang, Jianqun, Liu, Chaoming, Bai, Gang, Luo, Wenbo, Li, Pengwei

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.28 MB

english, 2018

15

Review of bias-temperature instabilities at the III-N/dielectric interface

Ostermaier, C., Lagger, P., Reiner, M., Pogany, D.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 3.00 MB

english, 2018

16

The temperature and oxygen vacancy effects on the diffusion coefficient and ionic conductivity in ferroelectric BaTiO 3 nanowires; A molecular dynamics study

Gholipour Shahraki, Mehran, Ghorbanali, Saeed

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.01 MB

english, 2018

17

Humidity build-up in electronic enclosures exposed to different geographical locations by RC modelling and reliability prediction

Conseil-Gudla, H., Staliulionis, Z., Mohanty, S., Jellesen, M.S., Hattel, J.H., Ambat, R.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 2.33 MB

english, 2018

18

A fast fault injection platform of multiple SEUs for SRAM-based FPGAs

Zhang, Rongsheng, Xiao, Liyi, Li, Jie, Cao, Xuebing, Qi, Chunhua, Li, Jiaqiang, Wang, Mingjiang

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 569 KB

english, 2018

19

Mössbauer studies of β → α phase transition in Sn-rich solder alloys

Zachariasz, Piotr, Skwarek, Agata, Illés, Balázs, Żukrowski, Jan, Hurtony, Tamás, Witek, Krzysztof

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 947 KB

english, 2018

20

A portable high-density absolute-measure NIRS imager for detecting prefrontal lobe activity under fatigue driving

Zhao, Yue, Xu, Guoyi, Sun, Yunlong, Pan, Boan, Li, Ting

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 877 KB

english, 2018

21

Ball impact responses of Sn-1Ag-0.5Cu solder joints at different temperatures and surface finishes

Kao, Chin-Li, Chen, Tei-Chen

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 2.20 MB

english, 2018

22

Parameter driven monitoring for a flip-chip LED module under power cycling condition

Magnien, J., Mitterhuber, L., Rosc, J., Schrank, F., Hörth, S., Hutter, M., Defregger, S., Kraker, E.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 823 KB

english, 2018

23

Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes

Jia, Yunpeng, Lin, Zhenhua, Hu, Dongqing, Wu, Yu, Li, Peng, Liu, Guanghai

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 784 KB

english, 2018

24

Study and analysis of DR-VCO for rad-hardness in type II third order CPLL

Karthigeyan, K.A., Chandramani, Premanand Venkatesh

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.48 MB

english, 2018

25

Importance of test parameters, specimen type and use configuration on the identification of Sn/Ag solder behaviour laws

Martin, Carmen, Micol, Alexandre, Pérès, François

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.93 MB

english, 2018

26

Editorial

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 205 KB

english, 2018

27

Editorial Board

Journal:

Microelectronics Reliability

Year:

2018

File:

PDF, 131 KB

2018

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