Accelerated carrier recombination by grain boundary/edge...

APL Materials 2018 / 05 Vol. 6; Iss. 5

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., Wang, Yaguo
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Volume:
6
Language:
english
Journal:
APL Materials
DOI:
10.1063/1.5022339
Date:
May, 2018
File:
PDF, 1.28 MB
english, 2018
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