Volume 6; Issue 5

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APL Materials
Volume 6; Issue 5

APL Materials

Volume 6; Issue 5

1

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

Nuytten, T., Bogdanowicz, J., Witters, L., Eneman, G., Hantschel, T., Schulze, A., Favia, P., Bender, H., De Wolf, I., Vandervorst, W.

Journal:

Year:

2018

Language:

english

File:

PDF, 5.43 MB

english, 2018

2

Relation between film thickness and surface doping of MoS 2 based field effect transistors

Lockhart de la Rosa, César J., Arutchelvan, Goutham, Leonhardt, Alessandra, Huyghebaert, Cedric, Radu, Iuliana, Heyns, Marc, De Gendt, Stefan

Journal:

Year:

2018

Language:

english

File:

PDF, 1.09 MB

english, 2018

3

A graphene integrated highly transparent resistive switching memory device

Dugu, Sita, Pavunny, Shojan P., Limbu, Tej B., Weiner, Brad R., Morell, Gerardo, Katiyar, Ram S.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

4

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., Wang, Yaguo

Journal:

Year:

2018

Language:

english

File:

PDF, 1.28 MB

english, 2018

5

Spontaneous Hall effects in the electron system at the SmTiO 3 /EuTiO 3 interface

Ahadi, Kaveh, Kim, Honggyu, Stemmer, Susanne

Journal:

Year:

2018

Language:

english

File:

PDF, 785 KB

english, 2018

6

Perspective: Optical measurement of feature dimensions and shapes by scatterometry

Diebold, Alain C., Antonelli, Andy, Keller, Nick

Journal:

Year:

2018

Language:

english

File:

PDF, 6.68 MB

english, 2018

7

Preface: Materials, metrology, and modeling for a future beyond CMOS technology

Antonelli, G. Andrew, Herr, Dann, King, Sean W.

Journal:

Year:

2018

Language:

english

File:

PDF, 241 KB

english, 2018

8

Perspective: New process technologies required for future devices and scaling

Clark, R., Tapily, K., Yu, K.-H., Hakamata, T., Consiglio, S., O’Meara, D., Wajda, C., Smith, J., Leusink, G.

Journal:

Year:

2018

Language:

english

File:

PDF, 4.11 MB

english, 2018

9

Thermal conductivity and thermal boundary resistance of atomic layer deposited high- k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

Scott, Ethan A., Gaskins, John T., King, Sean W., Hopkins, Patrick E.

Journal:

Year:

2018

Language:

english

File:

PDF, 447 KB

english, 2018

10

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Boninelli, S., Milazzo, R., Carles, R., Houdellier, F., Duffy, R., Huet, K., La Magna, A., Napolitani, E., Cristiano, F.

Journal:

Year:

2018

Language:

english

File:

PDF, 2.14 MB

english, 2018

11

Synthesis and electronic properties of Fe 2 TiO 5 epitaxial thin films

Osada, Motoki, Nishio, Kazunori, Hwang, Harold Y., Hikita, Yasuyuki

Journal:

Year:

2018

Language:

english

File:

PDF, 1.71 MB

english, 2018

12

Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO 2−x

Magyari-Köpe, Blanka, Song, Yali, Duncan, Dan, Zhao, Liang, Nishi, Yoshio

Journal:

Year:

2018

Language:

english

File:

PDF, 4.44 MB

english, 2018

13

Perspective: 2D for beyond CMOS

Robinson, Joshua A.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.78 MB

english, 2018

14

Carrier density control of magnetism and Berry phases in doped EuTiO 3

Ahadi, Kaveh, Gui, Zhigang, Porter, Zach, Lynn, Jeffrey W., Xu, Zhijun, Wilson, Stephen D., Janotti, Anderson, Stemmer, Susanne

Journal:

Year:

2018

Language:

english

File:

PDF, 1.39 MB

english, 2018

15

Less severe processing improves carbon nanotube photovoltaic performance

Shea, Matthew J., Wang, Jialiang, Flach, Jessica T., Zanni, Martin T., Arnold, Michael S.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.97 MB

english, 2018

16

Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Conti, G., Nemšák, S., Kuo, C.-T., Gehlmann, M., Conlon, C., Keqi, A., Rattanachata, A., Karslıoğlu, O., Mueller, J., Sethian, J., Bluhm, H., Rault, J. E., Rueff, J. P., Fang, H., Javey, A., Fadley, C

Journal:

Year:

2018

Language:

english

File:

PDF, 2.05 MB

english, 2018