Gate-Recessed Normally OFF GaN MOSHEMT With...

IEEE Transactions on Electron Devices 2018 / 5 Vol. 65; Iss. 5

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si 3 N 4 as the Mask

Gao, Jingnan, Jin, Yufeng, Hao, Yilong, Xie, Bing, Wen, Cheng P., Shen, Bo, Wang, Maojun
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2812215
Date:
May, 2018
File:
PDF, 1.92 MB
english, 2018
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