IEEE Transactions on Electron Devices

1

Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing

Pavlidis, Georges, Kendig, Dustin, Heller, Eric R., Graham, Samuel

Journal:

Year:

2018

Language:

english

File:

PDF, 2.21 MB

english, 2018

2

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Zhang, Meng, Ma, Xiao-Hua, Yang, Ling, Mi, Minhan, Hou, Bin, He, Yunlong, Wu, Sheng, Lu, Yang, Zhang, Heng-Shuang, Zhu, Qing, Yin, Jun, Wu, Jiafeng, Yang, Lin-An, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.27 MB

english, 2018

3

Performance Potential of Ge CMOS Technology From a Material-Device-Circuit Perspective

Shin, SangHoon, Jiang, Hai, Ahn, Woojin, Wu, Heng, Chung, Wonil, Ye, Peide D., Alam, Muhammad Ashraful

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.69 MB

english, 2018

4

The Effect of Oxygen Vacancy Concentration on Indium Gallium Oxide Solar Blind Photodetector

Chen, Kuan-Yu, Hsu, Ching-Chien, Yu, Hsin-Chieh, Peng, Yu-Ming, Yang, Chih-Chiang, Su, Yan-Kuin

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.29 MB

english, 2018

5

Demonstration of Unsupervised Learning With Spike-Timing-Dependent Plasticity Using a TFT-Type NOR Flash Memory Array

Kim, Chul-Heung, Lee, Soochang, Woo, Sung Yun, Kang, Won-Mook, Lim, Suhwan, Bae, Jong-Ho, Kim, Jaeha, Lee, Jong-Ho

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.18 MB

english, 2018

6

Highly Sensitive and Optically Transparent Resistive Pressure Sensors Based on a Graphene/Polyaniline-Embedded PVB Film

Liu, Shi-Yu, Lian, Lu, Pan, Jin, Lu, Jian-Gang, Shieh, Han-Ping D.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.89 MB

english, 2018

7

-Gate Junctionless Silicon Nanowire Transistors

Carrillo-Nunez, Hamilton, Mirza, Muhamad M., Paul, Douglas J., MacLaren, Donald A., Asenov, Asen, Georgiev, Vihar P.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.06 MB

english, 2018

8

Monte Carlo Simulation of Nanowires Array Biosensor With AC Electroosmosis

Lee, Che-An, Teramoto, Akinobu, Watanabe, Hiroshi

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.22 MB

english, 2018

9

Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

Kim, Taeho, Jeon, Sanghun

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 732 KB

english, 2018

10

Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In 0.53 Ga 0.47 As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In 0.53 Ga 0.47 As Channel

Kim, Seong Kwang, Shim, Jae-Phil, Geum, Dae-Myeong, Kim, Jaewon, Kim, Chang Zoo, Kim, Han-Sung, Song, Jin Dong, Choi, Sung-Jin, Kim, Dae Hwan, Choi, Won Jun, Kim, Hyung-Jun, Kim, Dong Myong, Kim, Sang

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.55 MB

english, 2018

11

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

Acurio, Eliana, Crupi, Felice, Ronchi, Nicolo, De Jaeger, Brice, Bakeroot, Benoit, Decoutere, Stefaan, Trojman, Lionel

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.49 MB

english, 2018

12

Au/TiO 2 Nanotubes/Ti-Based Solid-State Vapor Sensor: Efficient Sensing in Resistive and Capacitive Modes

Bindra, Prateek, Gangopadhyay, Subhashis, Hazra, Arnab

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.52 MB

english, 2018

13

Formaldehyde Sensing Characteristics of a NiO-Based Sensor Decorated With Pd Nanoparticles and a Pd Thin Film

Chen, Huey-Ing, Hsiao, Cheng-Yu, Chen, Wei-Cheng, Chang, Ching-Hong, Liu, I-Ping, Chou, Tzu-Chieh, Liu, Wen-Chau

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.23 MB

english, 2018

14

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si 3 N 4 as the Mask

Gao, Jingnan, Jin, Yufeng, Hao, Yilong, Xie, Bing, Wen, Cheng P., Shen, Bo, Wang, Maojun

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.92 MB

english, 2018

15

Quantum Confinement and Interface States in ZnO Nanocrystalline Thin-Film Transistors

Chapman, Richard A., Rodriguez-Davila, Rodolfo A., Vandenberghe, William G., Hinkle, Christopher L., Mejia, Israel, Chatterjee, Amitava, Quevedo-Lopez, Manuel A.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 9.30 MB

english, 2018

16

The Possibility of mW/cm 2 -Class On-Chip Power Generation Using Ultrasmall Si Nanowire-Based Thermoelectric Generators

Zhang, Hui, Xu, Taiyu, Hashimoto, Shuichiro, Watanabe, Takanobu

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.10 MB

english, 2018

17

A Solution-Processed Operational Amplifier Using Direct Light-Patterned a-InGaZnO TFTs

Kim, Daejung, Kim, Yongchan, Choi, Keun-Yeong, Lee, Dayoon, Lee, Hojin

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.99 MB

english, 2018

18

Dielectric Breakdown-Based Microsensor for On-Chip Ambient Pressure Monitoring

Mukherjee, Tania, Paul, Ambarish

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.91 MB

english, 2018

19

An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation

Nichetti, C., Pilotto, A., Palestri, P., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Driussi, F., Klein, N. Y., Menk, R. H., Steinhartova, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.31 MB

english, 2018

20

A Self-Consistent, Semiclassical Electrothermal Modeling Framework for Mott Devices

Karda, Kamal, Mouli, Chandra, Ramanathan, Shriram, Alam, Muhammad Ashraful

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 829 KB

english, 2018

21

Performance Enhancement by Optimization of Poly Grain Size and Channel Thickness in a Vertical Channel 3-D NAND Flash Memory

Bhatt, Upendra Mohan, Kumar, Arvind, Manhas, Sanjeev Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.14 MB

english, 2018

22

THE 24th INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING

Journal:

IEEE Transactions on Electron Devices

Year:

2018

File:

PDF, 1.75 MB

2018

24