Formation of a Stepped Si(100) Surface and Its Effect on...

Semiconductors 2018 / 3 Vol. 52; Iss. 3

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Esin, M. Yu., Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., Pchelyakov, O. P.
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Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618030107
Date:
March, 2018
File:
PDF, 621 KB
english, 2018
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