Volume 52; Issue 3

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Semiconductors
Volume 52; Issue 3

Semiconductors

Volume 52; Issue 3

1

Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures

Galiev, G. B., Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., Maltsev, P. P.

Journal:

Year:

2018

Language:

english

File:

PDF, 550 KB

english, 2018

2

Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface

Journal:

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

3

Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization

Agekyan, V. F., Borisov, E. V., Gudovskikh, A. S., Kudryashov, D. A., Monastyrenko, A. O., Serov, A. Yu., Filosofov, N. G.

Journal:

Year:

2018

Language:

english

File:

PDF, 928 KB

english, 2018

4

Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles

Zharova, Yu. A., Tolmachev, V. A., Bednaya, A. I., Pavlov, S. I.

Journal:

Year:

2018

Language:

english

File:

PDF, 556 KB

english, 2018

5

Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System

Borshch, N. A., Kurganskii, S. I.

Journal:

Year:

2018

Language:

english

File:

PDF, 706 KB

english, 2018

6

Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films

Tikhii, A. A., Nikolaenko, Yu. M., Zhikhareva, Yu. I., Kornievets, A. S., Zhikharev, I. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 213 KB

english, 2018

7

Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

Altukhov, V. I., Sankin, A. V., Sigov, A. S., Sysoev, D. K., Yanukyan, E. G., Filippova, S. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 162 KB

english, 2018

8

Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE

Khvostikov, V. P., Sorokina, S. V., Potapovich, N. S., Khvostikova, O. A., Timoshina, N. Kh., Shvarts, M. Z.

Journal:

Year:

2018

Language:

english

File:

PDF, 384 KB

english, 2018

9

Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers

Kozlovski, V. V., Vasil’ev, A. E., Karaseov, P. A., Lebedev, A. A.

Journal:

Year:

2018

Language:

english

File:

PDF, 243 KB

english, 2018

10

Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity

Romaka, V. A., Rogl, P. -F., Frushart, D., Kaczorowski, D.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.03 MB

english, 2018

11

Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

Manyakhin, F. I.

Journal:

Year:

2018

Language:

english

File:

PDF, 219 KB

english, 2018

12

Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals

Morozova, N. K., Miroshnikov, B. N.

Journal:

Year:

2018

Language:

english

File:

PDF, 134 KB

english, 2018

13

Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals

Plyatsko, S. V., Rashkovetskyi, L. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 411 KB

english, 2018

14

Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules

Andreeva, A. V., Davidyuk, N. Yu., Malevskiy, D. A., Panchak, A. N., Sadchikov, N. A., Chekalin, A. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 431 KB

english, 2018

15

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Esin, M. Yu., Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., Pchelyakov, O. P.

Journal:

Year:

2018

Language:

english

File:

PDF, 621 KB

english, 2018

16

Optimal Doping of Diode Current Interrupters

Kyuregyan, A. S.

Journal:

Year:

2018

Language:

english

File:

PDF, 235 KB

english, 2018

17

Electrical Breakdown in Pure n- and p-Si

Bannaya, V. F., Nikitina, E. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 163 KB

english, 2018

18

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

Bilenko, D. I., Belobrovaya, O. Ya., Terin, D. V., Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., Yagudin, I. T.

Journal:

Year:

2018

Language:

english

File:

PDF, 251 KB

english, 2018

19

Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations

Davydov, S. Yu.

Journal:

Year:

2018

Language:

english

File:

PDF, 162 KB

english, 2018

20

Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands

Sobolev, V. V., Perevoshchikov, D. A.

Journal:

Year:

2018

Language:

english

File:

PDF, 243 KB

english, 2018

21

Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films

Smirnov, V. A., Mokrushin, A. D., Denisov, N. N., Dobrovolskii, Yu. A.

Journal:

Year:

2018

Language:

english

File:

PDF, 275 KB

english, 2018

22

Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte

Astrova, E. V., Preobrazhenskiy, N. E., Li, G. V., Pavlov, S. I.

Journal:

Year:

2018

Language:

english

File:

PDF, 12.24 MB

english, 2018

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