Reactive ion etching of copper in an RF N2+ BCl3+ Cl2Plasma

Russian Microelectronics 2000 / 07-08 Vol. 29; Iss. 4

Reactive ion etching of copper in an RF N2+ BCl3+ Cl2Plasma

V. G. Mal’shakov, A. E. Berdnikov, A. A. Popov, V. N. Gusev
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Volume:
29
Language:
english
Pages:
6
DOI:
10.1007/bf02773271
Date:
July, 2000
File:
PDF, 424 KB
english, 2000
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