Volume 29; Issue 4

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Russian Microelectronics
Volume 29; Issue 4

Russian Microelectronics

Volume 29; Issue 4

1

In memory of Matvei I. Elinson (1918-2000)

Y. V. Gulyaev, K. A. Valiev, G. N. Mesyats, V. G. Mokerov, A. A. Orlikovskii, L. N. Patrikeev, G. N. Fursei, V. N. Shrednik, Y. I. Balkarei, V. G. Baru, L. L. Golik, V. N. Lutskii, P. I. Perov, V. A.

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 499 KB

english, 2000

2

The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor

V. N. Lutskii, T. N. Pinsker, M. I. Elinson

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 118 KB

english, 2000

3

Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

M. I. Makoviichuk

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 1.29 MB

english, 2000

4

Reactive ion etching of copper in an RF N2+ BCl3+ Cl2Plasma

V. G. Mal’shakov, A. E. Berdnikov, A. A. Popov, V. N. Gusev

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 424 KB

english, 2000

5

Thermal oxidation of indium phosphide in the presence of lead, zirconium, and titanium oxides

I. Ya. Mittova, A. V. Shukarev, V. V. Soshnikov, G. G. Bubnova

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 411 KB

english, 2000

6

Deep traps in heteroepitaxial SOS layers subjected to various treatments

A. S. Adonin, A. V. Bespalov, T. S. Kitichenko, T. G. Kolesnikova, A. P. Korovin, M. V. Shiryaeva

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 1.02 MB

english, 2000

7

Simulation of epitaxial growth under ion-beam sputtering

O. S. Trushin, V. F. Bochkarev, V. V. Naumov

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 1.31 MB

english, 2000

8

Synthesis of multifunction logic modules built on hierarchic neural networks

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 323 KB

english, 2000

9

Modeling of the gate junction in GaAs MESFETs

N. G. Tarnovskii, V. S. Osadchuk, A. V. Osadchuk

Journal:

Russian Microelectronics

Year:

2000

Language:

english

File:

PDF, 345 KB

english, 2000