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Volume 29; Issue 4
Main
Russian Microelectronics
Volume 29; Issue 4
Russian Microelectronics
Volume 29; Issue 4
1
In memory of Matvei I. Elinson (1918-2000)
Y. V. Gulyaev
,
K. A. Valiev
,
G. N. Mesyats
,
V. G. Mokerov
,
A. A. Orlikovskii
,
L. N. Patrikeev
,
G. N. Fursei
,
V. N. Shrednik
,
Y. I. Balkarei
,
V. G. Baru
,
L. L. Golik
,
V. N. Lutskii
,
P. I. Perov
,
V. A.
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 499 KB
Your tags:
english, 2000
2
The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor
V. N. Lutskii
,
T. N. Pinsker
,
M. I. Elinson
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 118 KB
Your tags:
english, 2000
3
Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon
M. I. Makoviichuk
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 1.29 MB
Your tags:
english, 2000
4
Reactive ion etching of copper in an RF N2+ BCl3+ Cl2Plasma
V. G. Mal’shakov
,
A. E. Berdnikov
,
A. A. Popov
,
V. N. Gusev
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 424 KB
Your tags:
english, 2000
5
Thermal oxidation of indium phosphide in the presence of lead, zirconium, and titanium oxides
I. Ya. Mittova
,
A. V. Shukarev
,
V. V. Soshnikov
,
G. G. Bubnova
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 411 KB
Your tags:
english, 2000
6
Deep traps in heteroepitaxial SOS layers subjected to various treatments
A. S. Adonin
,
A. V. Bespalov
,
T. S. Kitichenko
,
T. G. Kolesnikova
,
A. P. Korovin
,
M. V. Shiryaeva
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 1.02 MB
Your tags:
english, 2000
7
Simulation of epitaxial growth under ion-beam sputtering
O. S. Trushin
,
V. F. Bochkarev
,
V. V. Naumov
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 1.31 MB
Your tags:
english, 2000
8
Synthesis of multifunction logic modules built on hierarchic neural networks
V. N. Lopin
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 323 KB
Your tags:
english, 2000
9
Modeling of the gate junction in GaAs MESFETs
N. G. Tarnovskii
,
V. S. Osadchuk
,
A. V. Osadchuk
Journal:
Russian Microelectronics
Year:
2000
Language:
english
File:
PDF, 345 KB
Your tags:
english, 2000
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