Modeling of the gate junction in GaAs MESFETs

Russian Microelectronics 2000 / 07-08 Vol. 29; Iss. 4

Modeling of the gate junction in GaAs MESFETs

N. G. Tarnovskii, V. S. Osadchuk, A. V. Osadchuk
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Volume:
29
Language:
english
Pages:
5
DOI:
10.1007/bf02773276
Date:
July, 2000
File:
PDF, 345 KB
english, 2000
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