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An Improved Hot-Carrier Lifetime Evaluation Method for the n-Type LDMOS With Hot-Hole Injection
Zhang, Chunwei, Li, Yang, Li, Zhiming, Fu, Xiaoqian, Chen, ZhenxiangVolume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2842117
Date:
August, 2018
File:
PDF, 1.05 MB
english, 2018