Investigation of the Process of Plasma Through Etching of...

Russian Microelectronics 2018 / 9 Vol. 47; Iss. 5

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

Myakonkikh, A. V., Kuvaev, K. Yu., Tatarintsev, A. A., Orlikovskii, N. A., Rudenko, K. V., Guschin, O. P., Gornev, E. S.
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Volume:
47
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739718050062
Date:
September, 2018
File:
PDF, 1.12 MB
english, 2018
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