Volume 47; Issue 5

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Russian Microelectronics
Volume 47; Issue 5

Russian Microelectronics

Volume 47; Issue 5

1

Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation

Vyurkov, V. V., Khabutdinov, R. R., Nemtsov, A. B., Semenikhin, I. A., Rudenko, M. K., Rudenko, K. V., Lukichev, V. F.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 536 KB

english, 2018

2

Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism

Uvarov, I. V., Kupriyanov, A. N.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

3

The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer

Makhviladze, T. M., Sarychev, M. E.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 346 KB

english, 2018

4

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

Myakonkikh, A. V., Kuvaev, K. Yu., Tatarintsev, A. A., Orlikovskii, N. A., Rudenko, K. V., Guschin, O. P., Gornev, E. S.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 1.12 MB

english, 2018

5

Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics

Kudrya, V. P., Maishev, Yu. P.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 560 KB

english, 2018

6

Investigation of a Capacitor Array of a Composite Capacitive Touch Panel

Vlasov, A. I., Krivoshein, A. I., Terent’ev, D. S., Shakhnov, V. A.

Journal:

Russian Microelectronics

Year:

2018

Language:

english

File:

PDF, 365 KB

english, 2018