A SUB-MICRON CMOS PROCESS EMPLOYING TRENCH ISOLATION

A SUB-MICRON CMOS PROCESS EMPLOYING TRENCH ISOLATION

ROBERTS, M. C., BOLBOT, P. H., FOSTER, D. J.
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Volume:
49
Language:
english
Journal:
Le Journal de Physique Colloques
DOI:
10.1051/jphyscol:19884111
Date:
September, 1988
File:
PDF, 1.07 MB
english, 1988
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