Volume 49; Issue C4

Le Journal de Physique Colloques

Volume 49; Issue C4

1

A COMPARISON OF TRENCH FILLING MATERIALS FOR SUB-MICRON CMOS

BOLBOT, P. H., ROBERTS, M. C., MEDHURST, P. L.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 988 KB

english, 1988

2

CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODES

ELEWA, T., HADDARA, H., CRISTOLOVEANU, S., BRUEL, M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.13 MB

english, 1988

3

3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE

THURNER, M., SELBERHERR, S.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.27 MB

english, 1988

4

MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.12 MB

english, 1988

5

SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS

BEZ, R., CANTARELLI, D., CAPPELLETTI, P., MAGGIONI, F.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 892 KB

english, 1988

6

MAXIMUM OPERATING VOLTAGE LIMITATIONS DUE TO PARASITIC BIPOLAR ACTION IN VLSI CMOS

TAKACS, D., STEGER, M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.19 MB

english, 1988

7

RAPID THERMAL ANNEALING OF TiW SCHOTTKY CONTACTS ON GaAs

VAN HOVE, M., de POTTER, M., DE RAEDT, W., ZOU, G., VAN ROSSUM, M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.10 MB

english, 1988

8

MEASUREMENT OF MINORITY-CARRIER LIFETIME AND INTERFACE RECOMBINATION VELOCITIES IN P-I-N DIODES, FROM HIGH FREQUENCY RESPONSE OF A BIPOLAR JFET STRUCTURE

VITALE, G., SPIRITO, P.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 749 KB

english, 1988

9

ELECTRON BEAM WRITING ERASURE SWITCHES

GIRARD, P., PISTOULET, B., VALENZA, M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 754 KB

english, 1988

10

POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS

ROSSEL, P., MAIMOUNI, R., BELABADIA, M., TRANDUC, H., CORDONNIER, C. E., BAIRANZADE, M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 2.07 MB

english, 1988

11

SELECTIVE EPITAXY BASE FOR BIPOLAR TRANSISTORS

BURGHARTZ, J. N., GINSBERG, B. J., MADER, S. R., CHEN, T.-C., HARAME, D. L.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.37 MB

english, 1988

12

MEGAPIXEL IMAGE SENSORS TECHNOLOGY

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.10 MB

english, 1988

13

A CONTACTLESS TECHNIQUE FOR THE CHARACTERIZATION OF INTERNALLY GETTERED CZ SILICON

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.20 MB

english, 1988

14

A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF HOT CARRIER DAMAGE

MAHNKOPF, R., PRZYREMBEL, G., WAGEMANN, H. G.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 841 KB

english, 1988

15

RESIST SCHEMES FOR SUBMICRON OPTICAL LITHOGRAPHY

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 3.30 MB

english, 1988

16

SILICON MOLECULAR BEAM EPITAXY : STATUS ; DEVICES ; TRENDS

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 3.38 MB

english, 1988

17

A SUB-MICRON CMOS PROCESS EMPLOYING TRENCH ISOLATION

ROBERTS, M. C., BOLBOT, P. H., FOSTER, D. J.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.07 MB

english, 1988

18

OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW FREQUENCY NOISE IN GaAs MESFETs

GITLIN, D., VISWANATHAN, C. R., ABIDI, A. A.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.28 MB

1988

19

THE HOT-ELECTRON PROBLEM IN SUBMICRON MOSFET

HÄNSCH, W., ORLOWSKI, M., WEBER, W.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.35 MB

english, 1988

20

MOSFET GATE CURRENT MODELLING USING MONTE-CARLO METHOD

VOVES, J., VESELY, J.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.24 MB

english, 1988

21

DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS

WOERLEE, P. H., JUFFERMANS, C. A.H., LIFKA, H., WALKER, A. J., POORTER, T., MERKS-EPPINGBROEK, H. J.H., OUDE LANSINK, F. M.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 1.65 MB

english, 1988

22

PHYSICAL BEHAVIOUR MODELLING OF VDMOS DEVICES

PAREDES, J., FERNANDEZ, J., BERTA, F., HIDALGO, S., REBOLLO, J., MILLAN, J.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 353 KB

english, 1988

23

DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS

WOERLEE, P. H., JUFFERMANS, C. A.H., LIFKA, H., WALKER, A. J., POORTER, T., MERKS-EPPINGBROEK, H. J.H., OUDE LANSINK, F. M.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.65 MB

1988

24

PHYSICAL BEHAVIOUR MODELLING OF VDMOS DEVICES

PAREDES, J., FERNANDEZ, J., BERTA, F., HIDALGO, S., REBOLLO, J., MILLAN, J.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 353 KB

1988

25

DIFFUSION BARRIER LAYERS FOR OHMIC CONTACTS TO GaAs

ALLAN, D. A., HERNIMAN, J., GILBERT, M. J., O'SULLIVAN, P. J., GRIMSHAW, M. P., STATION-BEVAN, A. E.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 544 KB

english, 1988

26

A NOVEL BOROSILICATE GLASS (SiOB-BSG) BY LOW PRESSURE DECOMPOSITION OF A MONOMOLECULAR LIQUID PRECURSOR

TREICHEL, H., BECKER, F. S., FUCHS, D., KRUCK, T.

Journal:

Le Journal de Physique Colloques

Year:

1988

Language:

english

File:

PDF, 665 KB

english, 1988

27

A NOVEL BOROSILICATE GLASS (SiOB-BSG) BY LOW PRESSURE DECOMPOSITION OF A MONOMOLECULAR LIQUID PRECURSOR

TREICHEL, H., BECKER, F. S., FUCHS, D., KRUCK, T.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 665 KB

1988

28

POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY

BOHNERT, G., HÃCKER, R., HANGLEITER, A.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.27 MB

1988

29

BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON

GHANNAM, M. Y., MERTENS, R. P., JAIN, S. C., NIJS, J. F., VAN OVERSTRAETEN, R.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.36 MB

1988

30

ULTRAFAST SINGLE PHOTON DETECTOR WITH DOUBLE EPITAXIAL STRUCTURE FOR MINIMUM CARRIER DIFFUSION EFFECT

LACAITA, A., GHIONI, M., COVA, S.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.25 MB

1988

31

COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY

SUN, G.-L., ZHAN, J., TONG, Q.-Y., XIE, S.-J., CAI, Y.-M., LU, S.-J.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.79 MB

1988

32

GaSb AND GaInAsSb PHOTODETECTORS FOR Î» > 1.55 Âµm PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

BOUGNOT, G., PASCAL, F., ROUMANILLE, F., BOUGNOT, J., GOUSKOV, L., DELANNOY, F., GROSSE, P., LUQUET, H.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 464 KB

1988

33

MODELLING DIFFUSION IN SILICIDES

MOYNAGH, P. B., BROWN, A. A., ROSSER, P. J.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 810 KB

1988

34

PLASMA ANODISATION OF SILICON FOR ADVANCED VLSI

TAYLOR, S., ECCLESTON, W., RINGNALDA, J., MAHER, D. M., EAGLESHAM, D. J., HUMPHREYS, C. J., GODFREY, D. J.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 1.84 MB

1988

35

FABRICATION AND LASING PROPERTIES OF A NOVEL SINGLE LONGITUDINAL MODE 1.5 Âµm GaInAsP/InP DISTRIBUTED REFLECTOR (DR) LASER

KOMORI, K., SUZUKI, H., LEE, K. S., ARAI, S., SUEMATSU, Y., AOKI, M., PELLEGRINO, S.

Journal:

Le Journal de Physique Colloques

Year:

1988

File:

PDF, 710 KB

1988

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