Structural properties of compressive strained Ge channels...

Semiconductor Science and Technology 2018 / 12 Vol. 33; Iss. 12

Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)

Alam, Md Mahfuz, Hoshi, Yusuke, Sawano, Kentarou
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Volume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aae575
Date:
December, 2018
File:
PDF, 1.17 MB
english, 2018
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