Volume 33; Issue 12

Semiconductor Science and Technology

Volume 33; Issue 12

1

Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction

Shida, Kazuki, Takeuchi, Shotaro, Tohei, Tetsuya, Imai, Yasuhiko, Kimura, Shigeru, Schulze, Andreas, Caymax, Matty, Sakai, Akira

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.31 MB

english, 2018

2

Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory

Tang, Zhenjie, Li, Rong, Zhang, Xiwei, Geng, Huijuan, Zang, Shuaipu, Zheng, Huiyuan, Lian, Mengchen, Hu, Niannian

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.73 MB

english, 2018

3

Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)

Alam, Md Mahfuz, Hoshi, Yusuke, Sawano, Kentarou

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

4

Design of sub-THz traveling wave tubes for high data rate long range wireless links

Basu, Rupa, Billa, Laxma R, Letizia, Rosa, Paoloni, Claudio

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.75 MB

english, 2018

5

THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x

Heyman, J N, Weiss, E M, Rollag, J R, Yu, K M, Dubon, O D, Kuang, Y J, Tu, C W, Walukiewicz, W

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 942 KB

english, 2018

6

Effects of post annealing on in-situ n-doped Ge-on-Si

Kumazawa, Yuta, Xu, Xuejun, Maruizumi, Takuya, Sawano, Kentarou

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.38 MB

english, 2018

7

Impact of nickel silicide on SiGe BiCMOS devices

Wolansky, Dirk, Grabolla, Thomas, Lenke, Thomas, Schulze, Sebastian, Zaumseil, Peter

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.37 MB

english, 2018

8

Localized surface plasmon resonance on two-dimensional HfSe 2 and ZrSe 2

Jaiswal, Hemendra Nath, Liu, Maomao, Shahi, Simran, Yao, Fei, Zhao, Qiyi, Xu, Xinlong, Li, Huamin

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.60 MB

english, 2018

9

Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heter

Fukuda, Masahiro, Rainko, Denis, Sakashita, Mitsuo, Kurosawa, Masashi, Buca, Dan, Nakatsuka, Osamu, Zaima, Shigeaki

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.32 MB

english, 2018

10

n-ZnO/p-GaN heterojunction ultraviolet (UV) photo detectors with high responsivity and fast response time grown by chemical vapor deposition technique

Saroj, Rajendra K, Deb, Swarup, Dhar, S

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 930 KB

english, 2018

11

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n + -Ge 1− x Sn x structure

Jeon, Jihee, Suzuki, Akihiro, Nakatsuka, Osamu, Zaima, Shigeaki

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

12

Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs

Konishi, Kumiko, Fujita, Ryusei, Mori, Yuki, Shima, Akio

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 2.53 MB

english, 2018

13

Graphene-filter-mounted tin-oxide-nanowire-transistor for chemical sensor

Kang, Youngsoo, Ju, Sanghyun

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.35 MB

english, 2018

14

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Tsai, Yen-Lin, Chen, Jone F, Shen, Shang-Feng, Hsu, Hao-Tang, Kao, Chia-Yu, Chang, Kuei-Fen, Hwang, Hann-Ping

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.56 MB

english, 2018

15

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core

Nagai, Ryo, Yamada, Kentaro, Fujimori, Shuntaro, Ikeda, Mitsuhisa, Makihara, Katsunori, Ohta, Akio, Miyazaki, Seiichi

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 1.30 MB

english, 2018

16

High-frequency very long wave infrared quantum cascade detectors

Liu, Junqi, Zhou, Yuhong, Zhai, Shenqiang, Liu, Fengqi, Liu, Shuman, Zhang, Jinchuan, Zhuo, Ning, Wang, Lijun, Wang, Zhanguo

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 940 KB

english, 2018

17

Study on Al 2 O 3 /Ge interface formed by ALD directly on epitaxial Ge

Shigesawa, Eriko, Matsuoka, Ryotaro, Fukumoto, Masashi, Sano, Ryosuke, Itoh, Kohei M, Nohira, Hiroshi, Sawano, Kentarou

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 942 KB

english, 2018