Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
Tsai, Yen-Lin, Chen, Jone F, Shen, Shang-Feng, Hsu, Hao-Tang, Kao, Chia-Yu, Chang, Kuei-Fen, Hwang, Hann-PingVolume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aaeb06
Date:
December, 2018
File:
PDF, 1.56 MB
english, 2018