Simulation-Based Study of High-Density SRAM Voltage Scaling...

IEEE Transactions on Electron Devices 2019 / 4 Vol. 66; Iss. 4

Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology

Wu, Yi-Ting, Ding, Fei, Connelly, Daniel, Chiang, Meng-Hsueh, Chen, Jone F., Liu, Tsu-Jae King
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2900921
Date:
April, 2019
File:
PDF, 3.68 MB
2019
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