IEEE Transactions on Electron Devices

1

Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs

Kim, Jungsik, Lee, Jeong-Soo, Han, Jin-Woo, Meyyappan, M.

Journal:

Year:

2019

File:

PDF, 7 KB

2019

2

Platinum Nanoparticles Decorated Graphene Oxide Based Resistive Device for Enhanced Formaldehyde Sensing: First-Principle Study and its Experimental Correlation

Manna, Bibhas, Chakrabarti, Indrajit, Guha, Prasanta Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 9 KB

2019

3

Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

Zhu, Guodong, Chen, Wenchao, Wang, Dawei, Xie, Hao, Zhao, Zhenguo, Gao, Pingqi, Schutt-Aine, Jose, Yin, Wen-Yan

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 9 KB

2019

4

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Thomas, B. R., Faramehr, S., Moody, D. C., Evans, J. E., Elwin, M. P., Igic, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 7 KB

2019

5

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Zeng, Yuping, Khandelwal, Sourabh, Shariar, Kazy F., Wang, Zijian, Lin, Guangyang, Cheng, Qi, Cui, Peng, Opila, Robert, Balakrishnan, Ganesh, Addamane, Sadhvikas, Taheri, Peyman, Kiriya, Daisuke, Hett

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 8 KB

2019

6

SkyLogic—A Proposal for a Skyrmion-Based Logic Device

Mankalale, Meghna G., Zhao, Zhengyang, Wang, Jian-Ping, Sapatnekar, Sachin S.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 8 KB

2019

7

Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs

Lin, Yen-Kai, Agarwal, Harshit, Kushwaha, Pragya, Kao, Ming-Yen, Liao, Yu-Hung, Chatterjee, Korok, Salahuddin, Sayeef, Hu, Chenming

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 8 KB

2019

8

Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET Process

Kuo, Ren-Jay, Chang, Fu-Cheng, King, Ya-Chin, Lin, Chrong-Jung

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 7 KB

2019

9

Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology

Wu, Yi-Ting, Ding, Fei, Connelly, Daniel, Chiang, Meng-Hsueh, Chen, Jone F., Liu, Tsu-Jae King

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 3.68 MB

2019

10

Enhanced Performance of MSM UV Photodetectors by Molecular Modification of Gallium Nitride Using Porphyrin Organic Molecules

Garg, Manjari, Tak, Bhera Ram, Ramgopal Rao, V., Singh, Rajendra

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.07 MB

2019

11

Improving the Properties of L-Ascorbic Acid Biosensor Based on GO/IGZO/Al Using Magnetic Beads

Chou, Jung-Chuan, Wu, You-Xiang, Kuo, Po-Yu, Lai, Chih-Hsien, Nien, Yu-Hsun, Lin, Si-Hong, Yan, Siao-Jie, Wu, Cian-Yi, Liao, Yi-Hung

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.42 MB

2019

12

Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power Electronics

Zhang, Weixiang, Ragab, Tarek, Basaran, Cemal

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 8 KB

english, 2019

13

Optimization Design on Active Guard Ring to Improve Latch-Up Immunity of CMOS Integrated Circuits

Chen, Chun-Cheng, Ker, Ming-Dou

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 9 KB

english, 2019

14

Development and Experimental Verification of an XY-Table for the Optimization of the Alignment of High-Power Gyrotrons

Ioannidis, Zisis C., Avramidis, Konstantinos A., Gantenbein, Gerd, Illy, Stefan, Kobarg, Thorsten, Pagonakis, Ioannis Gr., Rzesnicki, Tomasz, Jelonnek, John

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.16 MB

english, 2019

15

A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

Pilotto, A., Palestri, P., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Driussi, F., Menk, R. H., Nichetti, C., Steinhartova, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 7 KB

2019

16

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

Shrestha, Niraj Man, Li, Yiming, Suemitsu, Tetsuya, Samukawa, Seiji

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 8 KB

english, 2019

17

An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field Oxide

Wu, Jiayu, Kong, Moufu, Yi, Bo, Chen, Xing Bi

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 2.20 MB

2019

18

High-Temperature Impact-Ionization Model for 4H-SiC

Nida, Selamnesh, Grossner, Ulrike

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 836 KB

english, 2019

19

A Multiobjective Optimization Design Tool for Traveling-Wave Tubes’ Electron Optics System

Huang, Tao, Cao, Qiu-Feng, Liu, Jia, Gong, Da-Peng, Lei, Li, Jin, Xiao-Lin, Hu, Quan, Yang, Zhong-Hai, Li, Bin

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.75 MB

english, 2019

20

Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs

Yuan, Zhi Cheng, Gudem, Prasad S., Wong, Michael, Wang, Ji Kai, Hook, Terence B., Solomon, Paul, Kienle, Diego, Vaidyanathan, Mani

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.01 MB

english, 2019

21

Carrier Lifetime Measurement in Ultrathin FD-SOI Using Virtual Diodes

Lee, Kyung Hwa, Park, Hyung-Jin, Bawedin, Maryline, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.35 MB

english, 2019

22

Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String

Lin, Wei-Liang, Tsai, Wen-Jer, Cheng, C. C., Ku, S. H., Liu, Lenvis, Hwang, S. W., Lu, Tao-Cheng, Chen, Kuang-Chao, Tseng, Tseung-Yuen, Lu, Chih-Yuan

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.80 MB

english, 2019

23

Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates

Zhang, Weihang, Simoen, Eddy, Zhao, Ming, Zhang, Jincheng

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.70 MB

english, 2019

24

Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

Dai, Quan, Son, Dong-Hyeok, Yoon, Young-Jun, Kim, Jeong-Gil, Jin, Xiaoshi, Kang, In-Man, Kim, Dae-Hyun, Xu, Yue, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 1.54 MB

2019

25

Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

Dai, Quan, Son, Dong-Hyeok, Yoon, Young-Jun, Kim, Jeong-Gil, Jin, Xiaoshi, Kang, In-Man, Kim, Dae-Hyun, Xu, Yue, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.54 MB

english, 2019

26

Fine-Tuning Intermolecular and Intramolecular Interactions to Build the Films of Tris(Phthalocyaninato) Rare Earth Complexes and Their Comparative Performances in Ambipolar Gas Sensing

Zhao, Shuai, Kong, Xia, Wang, Xiangyang, Li, Xiyou, Yang, Guangwu, Chen, Yanli

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.97 MB

english, 2019

27