An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage...

IEEE Transactions on Electron Devices 2019 / 4 Vol. 66; Iss. 4

An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field Oxide

Wu, Jiayu, Kong, Moufu, Yi, Bo, Chen, Xing Bi
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2898232
Date:
April, 2019
File:
PDF, 2.20 MB
2019
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