Contrast of latch-up induced by pulsed gamma rays in CMOS...

Microelectronics Reliability 2019 / 07 Vol. 98

Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation

Li, Ruibin, He, Chaohui, Chen, Wei, Liu, Yan, Li, Junlin, Guo, Xiaoqiang, Yang, Shanchao
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Volume:
98
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.04.015
Date:
July, 2019
File:
PDF, 1.45 MB
english, 2019
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