The Effect of PMA with TiN Gate Electrode on the Formation...

IEICE Transactions on Electronics 2019 / 6 Vol. E102.C; Iss. 6

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)

KIM, Min Gee, OHMI, Shun-ichiro
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Volume:
E102.C
Language:
english
Journal:
IEICE Transactions on Electronics
DOI:
10.1587/transele.2018FUP0002
Date:
June, 2019
File:
PDF, 997 KB
english, 2019
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