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Volume E102.C; Issue 6
Main
IEICE Transactions on Electronics
Volume E102.C; Issue 6
IEICE Transactions on Electronics
Volume E102.C; Issue 6
1
The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)
KIM, Min Gee
,
OHMI, Shun-ichiro
Journal:
IEICE Transactions on Electronics
Year:
2019
Language:
english
File:
PDF, 997 KB
Your tags:
english, 2019
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